MOSFET N-CH 80V 6.7A 8SOIC Product overview: SI4896DY-T1-GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 80V, 6.7A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 80V, 6.7A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SI4896DY-T1-GE3 can be used for catalog matching and distributor lookup.
MOSFET N-CH 80V 6.7A 8SO
Manufacturer: Vishay
Win Source Part Number: 140341-SI4896DY-T1-G
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 1.56W (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 8-SO
Dimension: 8-SOIC (0.154", 3.90mm Width)
Drain-Source Breakdown Voltage: 80V
Continuous Drain Current at 25°C: 6.7A (Ta)
Gate-Source Threshold Voltage: 2V @ 250μA (Min)
Max Gate Charge: 41nC @ 10V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 16.5 mOhm @ 10A, 10V
Popularity: Medium
Fake Threat In the Open Market: 59 pct.
Supply and Demand Status: Limited
N-Channel 80V 6.7A (Ta) 1.56W (Ta) Surface Mount 8-SOIC
N-Channel 80V 6.7A (Ta) 1.56W (Ta) Surface Mount 8-SOIC
N-Channel 80V 6.7A (Ta) 1.56W (Ta) Surface Mount 8-SOIC
MOSFET, N-CH, 80V, 6.7A, 150DEG C, 1.56W; Transistor Polarity:N Channel; Drain Source Voltage Vds:80V; Continuous Drain Current Id:6.7A; On Resistance Rds(on):0.0135ohm; Transistor Mounting:Surface Mount; Rds(on) Test Voltage Vgs:10VRoHS Compliant: Yes
MOSFET, N-CH, 80V, 6.7A, NSOIC-8; Transistor Polarity:N Channel; Continuous Drain Current Id:6.7A; Drain Source Voltage Vds:80V; On Resistance Rds(on):0.0135ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2V; Power RoHS Compliant: Yes
MOSFET N-CH 80V 6.7A 8SO
| ERSAELECTRONICS PTE. LTD. | ODG (Origin Data Global) | Win Source Electronics | DigiKey | Newark, An Avnet Company | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | 278-SI4896DY-T1-GE3 | SI4896DY-T1-GE3 | 140341-SI4896DY-T1-GE3 | SI4896DY-T1-GE3DKR-ND | 70AC6507 | SI4896DY-T1-GE3 | SI4896DY-T1-GE3 |
| Product Name | 80V 6.7A MOSFET Transistor | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI4896DY-T1-GE3 | Single FETs, MOSFETs | Mosfet, N-Ch, 80V, 6.7A, 150Deg C, 1.56W; Transistor Polarity Vishay | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel | N-Channel; N-Channel | N-Channel; N-Channel | N-Channel | |||
| PD | 1560 milliwatts | 1560 milliwatts | 1560 milliwatts | ||||
| TJ | -55 C (-67 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | ||||
| Transistor Technology / Material | MOSFET (Metal Oxide) | ||||||
| V(BR)DSS | 80 volts | 80 volts |
