N-Channel 80V 6.7A (Ta) 1.56W (Ta) Surface Mount 8-SOIC
N-Channel 80V 6.7A (Ta) 1.56W (Ta) Surface Mount 8-SOIC
N-Channel 80V 6.7A (Ta) 1.56W (Ta) Surface Mount 8-SOIC
N-Ch MOSFET SO-8 80V 16.5mohm @ 10V Qg=
N-Ch MOSFET SO-8 80V 16.5mohm @ 10V Qg=
N-Ch MOSFET SO-8 80V 16.5mohm @ 10V Qg=
MOSFET N-CH 80V 6.7A 8SO
Manufacturer: Vishay
Win Source Part Number: 1096028-SI4896DY-T1-
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 1.56W (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 8-SO
Dimension: 8-SOIC (0.154", 3.90mm Width)
Drain-Source Breakdown Voltage: 80V
Continuous Drain Current at 25°C: 6.7A (Ta)
Gate-Source Threshold Voltage: 2V @ 250μA (Min)
Max Gate Charge: 41nC @ 10V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 16.5 mOhm @ 10A, 10V
Popularity: Medium
Fake Threat In the Open Market: 47 pct.
Supply and Demand Status: Limited
MOSFET N-CH 80V 6.7A 8SO
MOSFET, P, SO-8; Transistor Polarity:N Channel; Continuous Drain Current Id:9.5A; Drain Source Voltage Vds:80V; On Resistance Rds(on):0.0165ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2V; Power Dissipation Pd:1.56W; RoHS Compliant: Yes
N CHANNEL MOSFET; Channel Type:N Channel; Drain Source Voltage Vds:80V; Continuous Drain Current Id:9.5A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:2V; Power Dissipation:3.1W RoHS Compliant: Yes
N CH MOSFET; Channel Type:N Channel; Drain Source Voltage Vds:80V; Continuous Drain Current Id:9.5A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:2V; Power Dissipation:1.56W RoHS Compliant: Yes
| DigiKey | RS Components, Ltd. | ODG (Origin Data Global) | Win Source Electronics | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | Newark, An Avnet Company | Newark, An Avnet Company | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | SI4896DY-T1-E3TR-ND | 1807961 | SI4896DY-T1-E3 | 1096028-SI4896DY-T1-E3 | SI4896DY-T1-E3 | 60AC3817 | 06J7957 | 35K3481 | SI4896DY-T1-E3 |
| Product Name | Single FETs, MOSFETs | MOSFETs | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI4896DY-T1-E3 | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Mosfet, P, So-8; Transistor Polarity Vishay | N Channel Mosfet; Channel Type Vishay | N Ch Mosfet; Channel Type Vishay | MOSFET |
| Polarity | N-Channel | N-Channel; N-Channel | N-Channel; N-Channel | N-Channel | |||||
| Package Type | "8-SOIC (0.154"", 3.90mm Width)" | SO-8; SO-8 | 8-SOIC (0.154", 3.90mm Width) | SOT3; 8-SO | 8-SOIC (0.154, 3.90mm Width) | TO-3; SO-8 | TO-3 | TO-3 | |
| Transistor Technology / Material | MOSFET (Metal Oxide) | ||||||||
| V(BR)DSS | 80 volts | 80 volts | |||||||
| IDSS | 6700 milliamps | 9500 milliamps | 9500 milliamps | 9500 milliamps |
