N-Channel 80V 6.7A (Ta) 1.56W (Ta) Surface Mount 8-SOIC
N-Channel 80V 6.7A (Ta) 1.56W (Ta) Surface Mount 8-SOIC
N-Channel 80V 6.7A (Ta) 1.56W (Ta) Surface Mount 8-SOIC
MOSFET N-CH 80V 6.7A 8SO
N-CH JFET 80V 9.5A 16.5mR SOIC Product overview: SI4896DY-T1-E3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 80V, 9.5A, SOIC. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 80V, 9.5A, SOIC, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SI4896DY-T1-E3 can be used for catalog matching and distributor lookup.
Manufacturer: Vishay
Win Source Part Number: 1096028-SI4896DY-T1-
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 1.56W (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 8-SO
Dimension: 8-SOIC (0.154", 3.90mm Width)
Drain-Source Breakdown Voltage: 80V
Continuous Drain Current at 25°C: 6.7A (Ta)
Gate-Source Threshold Voltage: 2V @ 250μA (Min)
Max Gate Charge: 41nC @ 10V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 16.5 mOhm @ 10A, 10V
Popularity: Medium
Fake Threat In the Open Market: 47 pct.
Supply and Demand Status: Limited
N-Ch MOSFET SO-8 80V 16.5mohm @ 10V Qg=
N-Ch MOSFET SO-8 80V 16.5mohm @ 10V Qg=
N-Ch MOSFET SO-8 80V 16.5mohm @ 10V Qg=
MOSFET N-CH 80V 6.7A 8SO
MOSFET, P, SO-8; Transistor Polarity:N Channel; Continuous Drain Current Id:9.5A; Drain Source Voltage Vds:80V; On Resistance Rds(on):0.0165ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2V; Power Dissipation Pd:1.56W; RoHS Compliant: Yes
N CHANNEL MOSFET; Channel Type:N Channel; Drain Source Voltage Vds:80V; Continuous Drain Current Id:9.5A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:2V; Power Dissipation:3.1W RoHS Compliant: Yes
N CH MOSFET; Channel Type:N Channel; Drain Source Voltage Vds:80V; Continuous Drain Current Id:9.5A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:2V; Power Dissipation:1.56W RoHS Compliant: Yes
| DigiKey | ODG (Origin Data Global) | ERSAELECTRONICS PTE. LTD. | Win Source Electronics | RS Components, Ltd. | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | Newark, An Avnet Company | Newark, An Avnet Company | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|---|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | SI4896DY-T1-E3TR-ND | SI4896DY-T1-E3 | 278-SI4896DY-T1-E3 | 1096028-SI4896DY-T1-E3 | 1807961 | SI4896DY-T1-E3 | 60AC3817 | 06J7957 | 35K3481 | SI4896DY-T1-E3 |
| Product Name | Single FETs, MOSFETs | Single FETs, MOSFETs | 80V 9.5A SOIC MOSFET Transistor | TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI4896DY-T1-E3 | MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Mosfet, P, So-8; Transistor Polarity Vishay | N Channel Mosfet; Channel Type Vishay | N Ch Mosfet; Channel Type Vishay | MOSFET |
| Polarity | N-Channel | N-Channel; N-Channel | N-Channel | N-Channel; N-Channel | N-Channel | |||||
| Package Type | "8-SOIC (0.154"", 3.90mm Width)" | 8-SOIC (0.154", 3.90mm Width) | SOT3; 8-SO | SO-8; SO-8 | 8-SOIC (0.154, 3.90mm Width) | TO-3; SO-8 | TO-3 | TO-3 | ||
| Transistor Technology / Material | MOSFET (Metal Oxide) | |||||||||
| V(BR)DSS | 80 volts | 80 volts | ||||||||
| IDSS | 6700 milliamps | 9500 milliamps | 9500 milliamps | 9500 milliamps |
