N-CH JFET 30V 8.9A 11mR SOP-8 Surface Mount Product overview: SI4894BDY-T1-GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include SMD, 30V, 8.9A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, SMD, 30V, 8.9A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SI4894BDY-T1-GE3
N-Channel 30V 8.9A (Ta) 1.4W (Ta) Surface Mount 8-SOIC
N-Channel 30V 8.9A (Ta) 1.4W (Ta) Surface Mount 8-SOIC
N-Channel 30V 8.9A (Ta) 1.4W (Ta) Surface Mount 8-SOIC
MOSFET N-CH 30V 8.9A 8SO
Manufacturer: Vishay
Win Source Part Number: 028550-SI4894BDY-T1-
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 1.4W (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 8-SO
Dimension: 8-SOIC (0.154", 3.90mm Width)
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 8.9A (Ta)
Gate-Source Threshold Voltage: 3V @ 250μA
Max Gate Charge: 38nC @ 10V
Max Input Capacitance: 1580pF @ 15V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 11 mOhm @ 12A, 10V
Popularity: Medium
Fake Threat In the Open Market: 29 pct.
Supply and Demand Status: Sufficient
N CHANNEL MOSFET, 30V, 12A; Channel Type:N Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:12A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:4.5V; Gate Source Threshold Voltage Max:3V; No. of Pins:8Pins RoHS Compliant: Yes
N CHANNEL MOSFET, 30V, 12A; Channel Type:N Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:12A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:4.5V; Gate Source Threshold Voltage Max:3V; No. of Pins:8Pins RoHS Compliant: Yes
MOSFET 30V 12A 2.5W 11mohm @ 10V
MOSFET N-CH 30V 8.9A 8SO
Trans Mosfet N-ch 30V 8.9A 8-PIN SOIC N T/r
| ERSAELECTRONICS PTE. LTD. | DigiKey | ODG (Origin Data Global) | Win Source Electronics | Newark, An Avnet Company | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | Utmel Electronic Limited | |
|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 278-SI4894BDY-T1-GE3 | 742-SI4894BDY-T1-GE3DKR-ND | SI4894BDY-T1-GE3 | 028550-SI4894BDY-T1-GE3 | 26R1892 | SI4894BDY-T1-GE3 | SI4894BDY-T1-GE3 | 880-SI4894BDY-T1-GE3 |
| Product Name | SMD 30V 8.9A MOSFET Transistor | Single FETs, MOSFETs | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI4894BDY-T1-GE3 | N Channel Mosfet, 30V, 12A; Channel Type Vishay | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Trans Mosfet N-ch 30V 8.9A 8-PIN SOIC N T/r |
| Polarity | N-Channel | N-Channel | N-Channel; N-Channel | N-Channel; N-Channel | N-Channel | |||
| PD | 1400 milliwatts | 1400 milliwatts | 1400 milliwatts | 1400 milliwatts | ||||
| TJ | -55 C (-67 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | ||||
| Package Type | "8-SOIC (0.154"", 3.90mm Width)" | 8-SOIC (0.154", 3.90mm Width) | SOT3; 8-SO | TO-3 | Surface Mount | |||
| Transistor Technology / Material | MOSFET (Metal Oxide) | SILICON |
