N-CH JFET 30V 8.9A 11mR SOP-8 Surface Mount Product overview: SI4894BDY-T1-GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include SMD, 30V, 8.9A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, SMD, 30V, 8.9A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SI4894BDY-T1-GE3
MOSFET N-CH 30V 8.9A 8SO
N-Channel 30V 8.9A (Ta) 1.4W (Ta) Surface Mount 8-SOIC
N-Channel 30V 8.9A (Ta) 1.4W (Ta) Surface Mount 8-SOIC
N-Channel 30V 8.9A (Ta) 1.4W (Ta) Surface Mount 8-SOIC
Manufacturer: Vishay
Win Source Part Number: 028550-SI4894BDY-T1-
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 1.4W (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 8-SO
Dimension: 8-SOIC (0.154", 3.90mm Width)
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 8.9A (Ta)
Gate-Source Threshold Voltage: 3V @ 250μA
Max Gate Charge: 38nC @ 10V
Max Input Capacitance: 1580pF @ 15V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 11 mOhm @ 12A, 10V
Popularity: Medium
Fake Threat In the Open Market: 29 pct.
Supply and Demand Status: Sufficient
Trans Mosfet N-ch 30V 8.9A 8-PIN SOIC N T/r
MOSFET N-CH 30V 8.9A 8SO
N CHANNEL MOSFET, 30V, 12A; Channel Type:N Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:12A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:4.5V; Gate Source Threshold Voltage Max:3V; No. of Pins:8Pins RoHS Compliant: Yes
N CHANNEL MOSFET, 30V, 12A; Channel Type:N Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:12A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:4.5V; Gate Source Threshold Voltage Max:3V; No. of Pins:8Pins RoHS Compliant: Yes
MOSFET 30V 12A 2.5W 11mohm @ 10V
| ERSAELECTRONICS PTE. LTD. | ODG (Origin Data Global) | DigiKey | Win Source Electronics | Utmel Electronic Limited | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 278-SI4894BDY-T1-GE3 | SI4894BDY-T1-GE3 | 742-SI4894BDY-T1-GE3DKR-ND | 028550-SI4894BDY-T1-GE3 | 880-SI4894BDY-T1-GE3 | SI4894BDY-T1-GE3 | 26R1892 | SI4894BDY-T1-GE3 |
| Product Name | SMD 30V 8.9A MOSFET Transistor | Single FETs, MOSFETs | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI4894BDY-T1-GE3 | Trans Mosfet N-ch 30V 8.9A 8-PIN SOIC N T/r | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | N Channel Mosfet, 30V, 12A; Channel Type Vishay | MOSFET |
| Polarity | N-Channel | N-Channel; N-Channel | N-Channel | N-Channel; N-Channel | N-Channel | |||
| PD | 1400 milliwatts | 1400 milliwatts | 1400 milliwatts | 1400 milliwatts | ||||
| TJ | -55 C (-67 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | ||||
| Transistor Technology / Material | MOSFET (Metal Oxide) | SILICON | ||||||
| V(BR)DSS | 30 volts | 30 volts | 30 volts |
