Vishay Precision Group 30V 8.9A SOIC MOSFET Transistor SI4894BDY-T1-E3

Description
N-CH JFET 30V 8.9A 11mR SOIC FET Product overview: SI4894BDY-T1-E3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30V, 8.9A, SOIC. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 8.9A, SOIC, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SI4894BDY-T1-E3 can be used for catalog matching and distributor lookup.
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Description
N-CH JFET 30V 8.9A 11mR SOIC FET Product overview: SI4894BDY-T1-E3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30V, 8.9A, SOIC. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 8.9A, SOIC, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SI4894BDY-T1-E3 can be used for catalog matching and distributor lookup.
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Suppliers

Company
Product
Description
Supplier Links
Singapore
30V 8.9A SOIC MOSFET Transistor
278-SI4894BDY-T1-E3
30V 8.9A SOIC MOSFET Transistor 278-SI4894BDY-T1-E3
N-CH JFET 30V 8.9A 11mR SOIC FET Product overview: SI4894BDY-T1-E3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30V, 8.9A, SOIC. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 8.9A, SOIC, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SI4894BDY-T1-E3 can be used for catalog matching and distributor lookup.

N-CH JFET 30V 8.9A 11mR SOIC FET Product overview: SI4894BDY-T1-E3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30V, 8.9A, SOIC. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 8.9A, SOIC, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SI4894BDY-T1-E3 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Single FETs, MOSFETs - SI4894BDY-T1-E3 - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
SI4894BDY-T1-E3
Single FETs, MOSFETs SI4894BDY-T1-E3
MOSFET N-CH 30V 8.9A 8SO

MOSFET N-CH 30V 8.9A 8SO

Supplier's Site Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI4894BDY-T1-E3 - 097658-SI4894BDY-T1-E3 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI4894BDY-T1-E3
097658-SI4894BDY-T1-E3
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI4894BDY-T1-E3 097658-SI4894BDY-T1-E3
Manufacturer: Vishay Win Source Part Number: 097658-SI4894BDY-T1- E3 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 1.4W (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 8-SO Dimension: 8-SOIC (0.154", 3.90mm Width) Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 8.9A (Ta) Gate-Source Threshold Voltage: 3V @ 250μA Max Gate Charge: 38nC @ 10V Max Input Capacitance: 1580pF @ 15V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 11 mOhm @ 12A, 10V Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 38 pct. Supply and Demand Status: Sufficient

Manufacturer: Vishay
Win Source Part Number: 097658-SI4894BDY-T1-E3
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 1.4W (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 8-SO
Dimension: 8-SOIC (0.154", 3.90mm Width)
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 8.9A (Ta)
Gate-Source Threshold Voltage: 3V @ 250μA
Max Gate Charge: 38nC @ 10V
Max Input Capacitance: 1580pF @ 15V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 11 mOhm @ 12A, 10V
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 38 pct.
Supply and Demand Status: Sufficient

Buy Now Datasheet
Single FETs, MOSFETs - SI4894BDY-T1-E3DKR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SI4894BDY-T1-E3DKR-ND
Single FETs, MOSFETs SI4894BDY-T1-E3DKR-ND
N-Channel 30V 8.9A (Ta) 1.4W (Ta) Surface Mount 8-SOIC

N-Channel 30V 8.9A (Ta) 1.4W (Ta) Surface Mount 8-SOIC

Buy Now Datasheet
Single FETs, MOSFETs - SI4894BDY-T1-E3TR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SI4894BDY-T1-E3TR-ND
Single FETs, MOSFETs SI4894BDY-T1-E3TR-ND
N-Channel 30V 8.9A (Ta) 1.4W (Ta) Surface Mount 8-SOIC

N-Channel 30V 8.9A (Ta) 1.4W (Ta) Surface Mount 8-SOIC

Buy Now Datasheet
Single FETs, MOSFETs - SI4894BDY-T1-E3CT-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SI4894BDY-T1-E3CT-ND
Single FETs, MOSFETs SI4894BDY-T1-E3CT-ND
N-Channel 30V 8.9A (Ta) 1.4W (Ta) Surface Mount 8-SOIC

N-Channel 30V 8.9A (Ta) 1.4W (Ta) Surface Mount 8-SOIC

Buy Now Datasheet
N Channel Mosfet, 30V, 12A; Channel Type Vishay - 65K1934 - Newark, An Avnet Company
Chicago, IL, United States
N Channel Mosfet, 30V, 12A; Channel Type Vishay
65K1934
N Channel Mosfet, 30V, 12A; Channel Type Vishay 65K1934
N CHANNEL MOSFET, 30V, 12A; Channel Type:N Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:12A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:20V; Gate Source Threshold Voltage Max:3V; No. of Pins:8Pins RoHS Compliant: Yes

N CHANNEL MOSFET, 30V, 12A; Channel Type:N Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:12A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:20V; Gate Source Threshold Voltage Max:3V; No. of Pins:8Pins RoHS Compliant: Yes

Supplier's Site
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - SI4894BDY-T1-E3 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
SI4894BDY-T1-E3
Discrete Semiconductor Products - Transistors - FETs, MOSFETs SI4894BDY-T1-E3
MOSFET N-CH 30V 8.9A 8SO

MOSFET N-CH 30V 8.9A 8SO

Supplier's Site
Sheung Wan, Hong Kong
MOSFET 30V 12V 1.4W

MOSFET 30V 12V 1.4W

Buy Now Datasheet

Technical Specifications

  ERSAELECTRONICS PTE. LTD. ODG (Origin Data Global) Win Source Electronics DigiKey Newark, An Avnet Company Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number 278-SI4894BDY-T1-E3 SI4894BDY-T1-E3 097658-SI4894BDY-T1-E3 SI4894BDY-T1-E3DKR-ND 65K1934 SI4894BDY-T1-E3 SI4894BDY-T1-E3
Product Name 30V 8.9A SOIC MOSFET Transistor Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI4894BDY-T1-E3 Single FETs, MOSFETs N Channel Mosfet, 30V, 12A; Channel Type Vishay Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET
Polarity N-Channel N-Channel; N-Channel N-Channel; N-Channel N-Channel N-Channel
PD 1400 milliwatts 1400 milliwatts 1400 milliwatts
TJ -55 C (-67 F) -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F)
Transistor Technology / Material MOSFET (Metal Oxide)
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