Vishay Intertechnology, Inc. Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single SI4890DY-T1-GE3

Description
Win Source Part Number: 1277513-SI4890DY-T1- GE3 Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single Series: TrenchFET® Package: Tape & Reel (TR) Standard Package: 2,500 Mounting: SMD (SMT) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 30 V Current - Continuous Drain (Id) @ 25°C: 11A (Ta) Rds On (Max) @ Id, Vgs: 12mOhm @ 11A, 10V Vgs(th) (Max) @ Id: 800mV @ 250µA (Min) Power Dissipation (Max): 2.5W (Ta) Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOIC Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 5 V Vgs (Max): ±25V Temperature Range - Operating: -55°C ~ 150°C (TJ) ECCN: EAR99 Fake Threat In the Open Market: 81 pct. MSL Level: 1 (Unlimited) HTSUS: 8541.29.0095 Mfr: Vishay Siliconix Base Product Number: SI4890 Product Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Request a Quote Datasheet
Description
Win Source Part Number: 1277513-SI4890DY-T1- GE3 Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single Series: TrenchFET® Package: Tape & Reel (TR) Standard Package: 2,500 Mounting: SMD (SMT) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 30 V Current - Continuous Drain (Id) @ 25°C: 11A (Ta) Rds On (Max) @ Id, Vgs: 12mOhm @ 11A, 10V Vgs(th) (Max) @ Id: 800mV @ 250µA (Min) Power Dissipation (Max): 2.5W (Ta) Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOIC Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 5 V Vgs (Max): ±25V Temperature Range - Operating: -55°C ~ 150°C (TJ) ECCN: EAR99 Fake Threat In the Open Market: 81 pct. MSL Level: 1 (Unlimited) HTSUS: 8541.29.0095 Mfr: Vishay Siliconix Base Product Number: SI4890 Product Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - 1277513-SI4890DY-T1-GE3 - Win Source Electronics
Laguna Hills, CA, United States
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single
1277513-SI4890DY-T1-GE3
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single 1277513-SI4890DY-T1-GE3
Win Source Part Number: 1277513-SI4890DY-T1- GE3 Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single Series: TrenchFET® Package: Tape & Reel (TR) Standard Package: 2,500 Mounting: SMD (SMT) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 30 V Current - Continuous Drain (Id) @ 25°C: 11A (Ta) Rds On (Max) @ Id, Vgs: 12mOhm @ 11A, 10V Vgs(th) (Max) @ Id: 800mV @ 250µA (Min) Power Dissipation (Max): 2.5W (Ta) Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOIC Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 5 V Vgs (Max): ±25V Temperature Range - Operating: -55°C ~ 150°C (TJ) ECCN: EAR99 Fake Threat In the Open Market: 81 pct. MSL Level: 1 (Unlimited) HTSUS: 8541.29.0095 Mfr: Vishay Siliconix Base Product Number: SI4890 Product Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V

Win Source Part Number: 1277513-SI4890DY-T1-GE3
Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Series: TrenchFET®
Package: Tape & Reel (TR)
Standard Package: 2,500
Mounting: SMD (SMT)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 30 V
Current - Continuous Drain (Id) @ 25°C: 11A (Ta)
Rds On (Max) @ Id, Vgs: 12mOhm @ 11A, 10V
Vgs(th) (Max) @ Id: 800mV @ 250µA (Min)
Power Dissipation (Max): 2.5W (Ta)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOIC
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 5 V
Vgs (Max): ±25V
Temperature Range - Operating: -55°C ~ 150°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 81 pct.
MSL Level: 1 (Unlimited)
HTSUS: 8541.29.0095
Mfr: Vishay Siliconix
Base Product Number: SI4890
Product Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V

Buy Now Datasheet
Single FETs, MOSFETs - SI4890DY-T1-GE3-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SI4890DY-T1-GE3-ND
Single FETs, MOSFETs SI4890DY-T1-GE3-ND
N-Channel 30V 11A (Ta) 2.5W (Ta) Surface Mount 8-SOIC

N-Channel 30V 11A (Ta) 2.5W (Ta) Surface Mount 8-SOIC

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - SI4890DY-T1-GE3 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
SI4890DY-T1-GE3
Discrete Semiconductor Products - Transistors - FETs, MOSFETs SI4890DY-T1-GE3
MOSFET N-CH 30V 11A 8-SOIC

MOSFET N-CH 30V 11A 8-SOIC

Supplier's Site

Technical Specifications

  Win Source Electronics DigiKey Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Transistors RF Transistors
Product Number 1277513-SI4890DY-T1-GE3 SI4890DY-T1-GE3-ND SI4890DY-T1-GE3
Product Name Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel N-Channel
Unlock Full Specs
to access all available technical data

Similar Products