Vishay Intertechnology, Inc. Single FETs, MOSFETs SI4888DY-T1-E3

MOSFET N-CH 30V 11A 8SO

Manufacturer: Vishay
Win Source Part Number: 116439-SI4888DY-T1-E3
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 1.6W (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 8-SO
Dimension: 8-SOIC (0.154", 3.90mm Width)
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 11A (Ta)
Gate-Source Threshold Voltage: 1.6V @ 250μA
Max Gate Charge: 24nC @ 5V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 7 mOhm @ 16A, 10V
Popularity: Medium
Fake Threat In the Open Market: 71 pct.
Supply and Demand Status: Limited
Application Field: Used in Industrial, Power Management

N-CH MOSFET, 30V, 11A, 7mR, SO, Surface Mount Product overview: SI4888DY-T1-E3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include SMD, 30V, 11A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, SMD, 30V, 11A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SI4888DY-T1-E3 can be used for catalog matching and distributor lookup.