Vishay Intertechnology, Inc. Discrete Semiconductor Products SI4888DY-E3

Description
Manufacturer: Vishay Win Source Part Number: 189997-SI4888DY-E3 Category: Discrete Semiconductor Products Family: Transistors - FETs, MOSFETs - Single Series: TrenchFET Packaging: Reel(TR) Mounting Style: SMD/SMT Operating Temperature Range: -55°C ~ 150°C (TJ) Package: 8-SOIC (0.154", 3.90mm Width) Manufacturer Device Package: 8-SO FET Type: MOSFET N-Channel, Metal Oxide FET Feature: Standard Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 11A (Ta) Rds On (Max) @ Id, Vgs: 7 mOhm @ 16A, 10V Vgs(th) (Max) @ Id: 1.6V @ 250μA Gate Charge (Qg) @ Vgs: 24nC @ 5V Power - Max: 1.6W Popularity: Medium Fake Threat In the Open Market: 45 pct. Supply and Demand Status: Limited
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Description
Manufacturer: Vishay Win Source Part Number: 189997-SI4888DY-E3 Category: Discrete Semiconductor Products Family: Transistors - FETs, MOSFETs - Single Series: TrenchFET Packaging: Reel(TR) Mounting Style: SMD/SMT Operating Temperature Range: -55°C ~ 150°C (TJ) Package: 8-SOIC (0.154", 3.90mm Width) Manufacturer Device Package: 8-SO FET Type: MOSFET N-Channel, Metal Oxide FET Feature: Standard Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 11A (Ta) Rds On (Max) @ Id, Vgs: 7 mOhm @ 16A, 10V Vgs(th) (Max) @ Id: 1.6V @ 250μA Gate Charge (Qg) @ Vgs: 24nC @ 5V Power - Max: 1.6W Popularity: Medium Fake Threat In the Open Market: 45 pct. Supply and Demand Status: Limited
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Discrete Semiconductor Products - 189997-SI4888DY-E3 - Win Source Electronics
Laguna Hills, CA, United States
Discrete Semiconductor Products
189997-SI4888DY-E3
Discrete Semiconductor Products 189997-SI4888DY-E3
Manufacturer: Vishay Win Source Part Number: 189997-SI4888DY-E3 Category: Discrete Semiconductor Products Family: Transistors - FETs, MOSFETs - Single Series: TrenchFET Packaging: Reel(TR) Mounting Style: SMD/SMT Operating Temperature Range: -55°C ~ 150°C (TJ) Package: 8-SOIC (0.154", 3.90mm Width) Manufacturer Device Package: 8-SO FET Type: MOSFET N-Channel, Metal Oxide FET Feature: Standard Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 11A (Ta) Rds On (Max) @ Id, Vgs: 7 mOhm @ 16A, 10V Vgs(th) (Max) @ Id: 1.6V @ 250μA Gate Charge (Qg) @ Vgs: 24nC @ 5V Power - Max: 1.6W Popularity: Medium Fake Threat In the Open Market: 45 pct. Supply and Demand Status: Limited

Manufacturer: Vishay
Win Source Part Number: 189997-SI4888DY-E3
Category: Discrete Semiconductor Products
Family: Transistors - FETs, MOSFETs - Single
Series: TrenchFET
Packaging: Reel(TR)
Mounting Style: SMD/SMT
Operating Temperature Range: -55°C ~ 150°C (TJ)
Package: 8-SOIC (0.154", 3.90mm Width)
Manufacturer Device Package: 8-SO
FET Type: MOSFET N-Channel, Metal Oxide
FET Feature: Standard
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 11A (Ta)
Rds On (Max) @ Id, Vgs: 7 mOhm @ 16A, 10V
Vgs(th) (Max) @ Id: 1.6V @ 250μA
Gate Charge (Qg) @ Vgs: 24nC @ 5V
Power - Max: 1.6W
Popularity: Medium
Fake Threat In the Open Market: 45 pct.
Supply and Demand Status: Limited

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Technical Specifications

  Win Source Electronics
Product Category Metal-Oxide Semiconductor FET (MOSFET)
Product Number 189997-SI4888DY-E3
Product Name Discrete Semiconductor Products
Polarity N-Channel
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