Vishay Intertechnology, Inc. TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI4884BDY-T1-E3 SI4884BDY-T1-E3

Description
Manufacturer: Vishay Win Source Part Number: 028547-SI4884BDY-T1- E3 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 2.5W (Ta), 4.45W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 8-SO Dimension: 8-SOIC (0.154", 3.90mm Width) Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 16.5A (Tc) Gate-Source Threshold Voltage: 3V @ 250μA Max Gate Charge: 35nC @ 10V Max Input Capacitance: 1525pF @ 15V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 9 mOhm @ 10A, 10V Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 72 pct. Supply and Demand Status: Balance
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Description
Manufacturer: Vishay Win Source Part Number: 028547-SI4884BDY-T1- E3 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 2.5W (Ta), 4.45W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 8-SO Dimension: 8-SOIC (0.154", 3.90mm Width) Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 16.5A (Tc) Gate-Source Threshold Voltage: 3V @ 250μA Max Gate Charge: 35nC @ 10V Max Input Capacitance: 1525pF @ 15V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 9 mOhm @ 10A, 10V Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 72 pct. Supply and Demand Status: Balance
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI4884BDY-T1-E3 - 028547-SI4884BDY-T1-E3 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI4884BDY-T1-E3
028547-SI4884BDY-T1-E3
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI4884BDY-T1-E3 028547-SI4884BDY-T1-E3
Manufacturer: Vishay Win Source Part Number: 028547-SI4884BDY-T1- E3 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 2.5W (Ta), 4.45W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 8-SO Dimension: 8-SOIC (0.154", 3.90mm Width) Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 16.5A (Tc) Gate-Source Threshold Voltage: 3V @ 250μA Max Gate Charge: 35nC @ 10V Max Input Capacitance: 1525pF @ 15V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 9 mOhm @ 10A, 10V Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 72 pct. Supply and Demand Status: Balance

Manufacturer: Vishay
Win Source Part Number: 028547-SI4884BDY-T1-E3
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 2.5W (Ta), 4.45W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 8-SO
Dimension: 8-SOIC (0.154", 3.90mm Width)
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 16.5A (Tc)
Gate-Source Threshold Voltage: 3V @ 250μA
Max Gate Charge: 35nC @ 10V
Max Input Capacitance: 1525pF @ 15V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 9 mOhm @ 10A, 10V
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 72 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Single FETs, MOSFETs - SI4884BDY-T1-E3TR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SI4884BDY-T1-E3TR-ND
Single FETs, MOSFETs SI4884BDY-T1-E3TR-ND
N-Channel 30V 16.5A (Tc) 2.5W (Ta), 4.45W (Tc) Surface Mount 8-SOIC

N-Channel 30V 16.5A (Tc) 2.5W (Ta), 4.45W (Tc) Surface Mount 8-SOIC

Buy Now Datasheet
Single FETs, MOSFETs - SI4884BDY-T1-E3 - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
SI4884BDY-T1-E3
Single FETs, MOSFETs SI4884BDY-T1-E3
MOSFET N-CH 30V 16.5A 8SO

MOSFET N-CH 30V 16.5A 8SO

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - SI4884BDY-T1-E3 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
SI4884BDY-T1-E3
Discrete Semiconductor Products - Transistors - FETs, MOSFETs SI4884BDY-T1-E3
MOSFET N-CH 30V 16.5A 8SO

MOSFET N-CH 30V 16.5A 8SO

Supplier's Site

Technical Specifications

  Win Source Electronics DigiKey ODG (Origin Data Global) Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number 028547-SI4884BDY-T1-E3 SI4884BDY-T1-E3TR-ND SI4884BDY-T1-E3 SI4884BDY-T1-E3
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI4884BDY-T1-E3 Single FETs, MOSFETs Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel; N-Channel N-Channel N-Channel; N-Channel
V(BR)DSS 30 volts 30 volts
PD 2500 to 4450 milliwatts 2500 milliwatts
TJ -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F)
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