Vishay Intertechnology, Inc. Single FETs, MOSFETs SI4884BDY-T1-E3

N-Channel 30V 16.5A (Tc) 2.5W (Ta), 4.45W (Tc) Surface Mount 8-SOIC

N-Channel JFET, 30V, 16.5A, 9mR Rds On, SOP-8 Product overview: SI4884BDY-T1-E3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 30V, 16.5A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 16.5A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SI4884BDY-T1-E3 can be used for catalog matching and distributor lookup.

Manufacturer: Vishay
Win Source Part Number: 028547-SI4884BDY-T1-E3
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 2.5W (Ta), 4.45W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 8-SO
Dimension: 8-SOIC (0.154", 3.90mm Width)
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 16.5A (Tc)
Gate-Source Threshold Voltage: 3V @ 250μA
Max Gate Charge: 35nC @ 10V
Max Input Capacitance: 1525pF @ 15V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 9 mOhm @ 10A, 10V
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 72 pct.
Supply and Demand Status: Balance

MOSFET N-CH 30V 16.5A 8SO