Vishay Intertechnology, Inc. TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI4882DY-T1 SI4882DY-T1

Description
Manufacturer: Vishay Storage Condition: Dry storage cabinet & Humidity protection package Win Source Part Number: 1092884-SI4882DY-T1 Length: 5 mm Mounting: SMD (SMT) Drain to Source Voltage (Vdss): 30 V Power Dissipation: 2.5 W Height: 1.55 mm Weight: 186.993455 mg Number of Channels: 1 Number of Pins: 8 Width: 4 mm Rise Time: 8 ns Fall Time: 19 ns Categories: Transistors - FETs, MOSFETs - RF Case / Package: SO Alternative Parts (Cross-Reference): SI4882DY-T1SI4882DYT 1; Popularity: Low Fake Threat In the Open Market: 55 pct. Supply and Demand Status: Shortage Maximum Operating Temperature: 150 °C Mount: Surface Mount RoHS: Compliant Radiation Hardening: No Min Operating Temperature: -55 °C Element Configuration: Single Max Power Dissipation: 2.5 W Turn-On Delay Time: 13 ns Continuous Drain Current (ID): 11 A Drain to Source Breakdown Voltage: 30 V Turn-Off Delay Time: 45 ns Drain to Source Resistance: 10.5 mΩ Gate to Source Voltage (Vgs): 25 V
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Description
Manufacturer: Vishay Storage Condition: Dry storage cabinet & Humidity protection package Win Source Part Number: 1092884-SI4882DY-T1 Length: 5 mm Mounting: SMD (SMT) Drain to Source Voltage (Vdss): 30 V Power Dissipation: 2.5 W Height: 1.55 mm Weight: 186.993455 mg Number of Channels: 1 Number of Pins: 8 Width: 4 mm Rise Time: 8 ns Fall Time: 19 ns Categories: Transistors - FETs, MOSFETs - RF Case / Package: SO Alternative Parts (Cross-Reference): SI4882DY-T1SI4882DYT 1; Popularity: Low Fake Threat In the Open Market: 55 pct. Supply and Demand Status: Shortage Maximum Operating Temperature: 150 °C Mount: Surface Mount RoHS: Compliant Radiation Hardening: No Min Operating Temperature: -55 °C Element Configuration: Single Max Power Dissipation: 2.5 W Turn-On Delay Time: 13 ns Continuous Drain Current (ID): 11 A Drain to Source Breakdown Voltage: 30 V Turn-Off Delay Time: 45 ns Drain to Source Resistance: 10.5 mΩ Gate to Source Voltage (Vgs): 25 V
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TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI4882DY-T1 - 1092884-SI4882DY-T1 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI4882DY-T1
1092884-SI4882DY-T1
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI4882DY-T1 1092884-SI4882DY-T1
Manufacturer: Vishay Storage Condition: Dry storage cabinet & Humidity protection package Win Source Part Number: 1092884-SI4882DY-T1 Length: 5 mm Mounting: SMD (SMT) Drain to Source Voltage (Vdss): 30 V Power Dissipation: 2.5 W Height: 1.55 mm Weight: 186.993455 mg Number of Channels: 1 Number of Pins: 8 Width: 4 mm Rise Time: 8 ns Fall Time: 19 ns Categories: Transistors - FETs, MOSFETs - RF Case / Package: SO Alternative Parts (Cross-Reference): SI4882DY-T1SI4882DYT 1; Popularity: Low Fake Threat In the Open Market: 55 pct. Supply and Demand Status: Shortage Maximum Operating Temperature: 150 °C Mount: Surface Mount RoHS: Compliant Radiation Hardening: No Min Operating Temperature: -55 °C Element Configuration: Single Max Power Dissipation: 2.5 W Turn-On Delay Time: 13 ns Continuous Drain Current (ID): 11 A Drain to Source Breakdown Voltage: 30 V Turn-Off Delay Time: 45 ns Drain to Source Resistance: 10.5 mΩ Gate to Source Voltage (Vgs): 25 V

Manufacturer: Vishay
Storage Condition: Dry storage cabinet & Humidity protection package
Win Source Part Number: 1092884-SI4882DY-T1
Length: 5 mm
Mounting: SMD (SMT)
Drain to Source Voltage (Vdss): 30 V
Power Dissipation: 2.5 W
Height: 1.55 mm
Weight: 186.993455 mg
Number of Channels: 1
Number of Pins: 8
Width: 4 mm
Rise Time: 8 ns
Fall Time: 19 ns
Categories: Transistors - FETs, MOSFETs - RF
Case / Package: SO
Alternative Parts (Cross-Reference): SI4882DY-T1SI4882DYT1;
Popularity: Low
Fake Threat In the Open Market: 55 pct.
Supply and Demand Status: Shortage
Maximum Operating Temperature: 150 °C
Mount: Surface Mount
RoHS: Compliant
Radiation Hardening: No
Min Operating Temperature: -55 °C
Element Configuration: Single
Max Power Dissipation: 2.5 W
Turn-On Delay Time: 13 ns
Continuous Drain Current (ID): 11 A
Drain to Source Breakdown Voltage: 30 V
Turn-Off Delay Time: 45 ns
Drain to Source Resistance: 10.5 mΩ
Gate to Source Voltage (Vgs): 25 V

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Technical Specifications

  Win Source Electronics
Product Category Metal-Oxide Semiconductor FET (MOSFET)
Product Number 1092884-SI4882DY-T1
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI4882DY-T1
V(BR)DSS 30 volts
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