Vishay Intertechnology, Inc. Single FETs, MOSFETs SI4880DY-T1-E3

Description
MOSFET N-CH 30V 13A 8-SOIC
Request a Quote Datasheet
Description
MOSFET N-CH 30V 13A 8-SOIC
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - SI4880DY-T1-E3 - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
SI4880DY-T1-E3
Single FETs, MOSFETs SI4880DY-T1-E3
MOSFET N-CH 30V 13A 8-SOIC

MOSFET N-CH 30V 13A 8-SOIC

Supplier's Site Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI4880DY-T1-E3 - 028546-SI4880DY-T1-E3 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI4880DY-T1-E3
028546-SI4880DY-T1-E3
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI4880DY-T1-E3 028546-SI4880DY-T1-E3
Manufacturer: Vishay Win Source Part Number: 028546-SI4880DY-T1-E 3 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 2.5W (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 8-SO Dimension: 8-SOIC (0.154", 3.90mm Width) Drain-Source Breakdown Voltage: 30V Gate-Source Threshold Voltage: 1.8V @ 250μA Max Gate Charge: 25nC @ 5V Maximum Gate-Source Voltage: ±25V Maximum Rds On at Id,Vgs: 8.5 mOhm @ 13A, 10V Popularity: Medium Fake Threat In the Open Market: 68 pct. Supply and Demand Status: Balance

Manufacturer: Vishay
Win Source Part Number: 028546-SI4880DY-T1-E3
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 2.5W (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 8-SO
Dimension: 8-SOIC (0.154", 3.90mm Width)
Drain-Source Breakdown Voltage: 30V
Gate-Source Threshold Voltage: 1.8V @ 250μA
Max Gate Charge: 25nC @ 5V
Maximum Gate-Source Voltage: ±25V
Maximum Rds On at Id,Vgs: 8.5 mOhm @ 13A, 10V
Popularity: Medium
Fake Threat In the Open Market: 68 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Singapore
30V 13A SOIC MOSFET Transistor
278-SI4880DY-T1-E3
30V 13A SOIC MOSFET Transistor 278-SI4880DY-T1-E3
MOSFET N-CH 30V 13A 8-SOIC Product overview: SI4880DY-T1-E3 from Vishay / Siliconix is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30V, 13A, SOIC. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 13A, SOIC, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SI4880DY-T1-E3 can be used for catalog matching and distributor lookup.

MOSFET N-CH 30V 13A 8-SOIC Product overview: SI4880DY-T1-E3 from Vishay / Siliconix is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30V, 13A, SOIC. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 13A, SOIC, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SI4880DY-T1-E3 can be used for catalog matching and distributor lookup.

Supplier's Site
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - SI4880DY-T1-E3 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
SI4880DY-T1-E3
Discrete Semiconductor Products - Transistors - FETs, MOSFETs SI4880DY-T1-E3
MOSFET N-CH 30V 13A 8-SOIC

MOSFET N-CH 30V 13A 8-SOIC

Supplier's Site
Transistor - 48969058 - Radwell International
Willingboro, NJ, United States
Transistor
48969058
Transistor 48969058
N-CH MOSFET SO-8 30V 8.5MOHM @ 10V QG=25NC ;ROHS COMPLIANT: YES. FREE 2 YEAR RADWELL WARRANTY

N-CH MOSFET SO-8 30V 8.5MOHM @ 10V QG=25NC ;ROHS COMPLIANT: YES. FREE 2 YEAR RADWELL WARRANTY

Supplier's Site

Technical Specifications

  ODG (Origin Data Global) Win Source Electronics ERSAELECTRONICS PTE. LTD. Shenzhen Shengyu Electronics Technology Limited Radwell International
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors RF Transistors
Product Number SI4880DY-T1-E3 028546-SI4880DY-T1-E3 278-SI4880DY-T1-E3 SI4880DY-T1-E3 48969058
Product Name Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI4880DY-T1-E3 30V 13A SOIC MOSFET Transistor Discrete Semiconductor Products - Transistors - FETs, MOSFETs Transistor
Polarity N-Channel; N-Channel N-Channel; N-Channel
Transistor Technology / Material MOSFET (Metal Oxide)
V(BR)DSS 30 volts 30 volts
IDSS 13000 milliamps
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