Manufacturer: Vishay
Win Source Part Number: 101639-SI4876DY-T1-E
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 1.6W (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 8-SO
Dimension: 8-SOIC (0.154", 3.90mm Width)
Drain-Source Breakdown Voltage: 20V
Continuous Drain Current at 25°C: 14A (Ta)
Gate-Source Threshold Voltage: 600mV @ 250μA (Min)
Max Gate Charge: 80nC @ 4.5V
Maximum Gate-Source Voltage: ±12V
Maximum Rds On at Id,Vgs: 5 mOhm @ 21A, 4.5V
Popularity: Medium
Fake Threat In the Open Market: 48 pct.
Supply and Demand Status: Balance
MOSFET N-CH 20V 14A 8SO
| Win Source Electronics | Shenzhen Shengyu Electronics Technology Limited | Utmel Electronic Limited | |
|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 101639-SI4876DY-T1-E3 | SI4876DY-T1-E3 | 880-SI4876DY-T1-E3 |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI4876DY-T1-E3 | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET 20V 21A 3.6W |
| Polarity | N-Channel; N-Channel | ||
| V(BR)DSS | 20 volts | 20 volts | |
| PD | 1600 milliwatts | 3600 milliwatts | |
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | |
| Package Type | SOT3; 8-SO |
