MOSFET N-CH 30V 12A 8-SOIC Product overview: SI4874BDY-T1-GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30V, 12A, SOIC. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 12A, SOIC, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SI4874BDY-T1-GE3
Manufacturer: Vishay Siliconix
Win Source Part Number: 794275-SI4874BDY-T1-
Series: TrenchFET
Packaging: Reel package
Operating Temperature Range: -55°C ~ 150°C (TJ)
Package: 8-SOIC (0.154", 3.90mm Width)
Mounting: SMD
Technology: MOSFET
Current - Continuous Drain (Id) @ 25°C: 12A (Ta)
Family Name: Si4874BDY
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Manufacturer Package: 8-SO
Channel Type Type: N
Drain Source Voltage: 30V
Vgs(th) (Maximum) @ Id: 3V @ 250μA
Gate Charge (Qg) (Maximum) @ Vgs: 25nC @ 4.5V
Input Capacitance (Ciss) (Maximum) @ Vds: 3230pF @ 15V
Vgs (Maximum): ±20V
Power Dissipation (Maximum): 1.6W (Ta)
Rds On (Maximum) @ Id, Vgs: 7 mOhm @ 16A, 10V
Alternative Parts (Cross-Reference): UPA2701GR-E2-AT; UPA2701GR-E1-AT; RJK0354DSP-00#J0; AO4716;
Introduction Date: August 06, 2004
ECCN: EAR99
Estimated EOL Date: 2022
Popularity: Medium
Fake Threat In the Open Market: 71 pct.
Supply and Demand Status: Balance
N-Channel 30V 12A (Ta) 1.6W (Ta) Surface Mount 8-SOIC
MOSFET 30V 16A 3.0W 7.0mohm @ 10V
N CHANNEL MOSFET, 30V, 16A, SOIC; Channel Type:N Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:16A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:4.5V; Gate Source Threshold Voltage Max:3V RoHS Compliant: Yes
N CHANNEL MOSFET, 30V, 16A, SOIC; Channel Type:N Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:16A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:4.5V; Gate Source Threshold Voltage Max:3V RoHS Compliant: Yes
MOSFET N-CH 30V 12A 8SO
| ERSAELECTRONICS PTE. LTD. | Win Source Electronics | DigiKey | VAST STOCK CO., LIMITED | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | 278-SI4874BDY-T1-GE3 | 794275-SI4874BDY-T1-GE3 | SI4874BDY-T1-GE3-ND | SI4874BDY-T1-GE3 | 15R5102 | SI4874BDY-T1-GE3 |
| Product Name | 30V 12A SOIC MOSFET Transistor | TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI4874BDY-T1-GE3 | Single FETs, MOSFETs | MOSFET | N Channel Mosfet, 30V, 16A, Soic; Channel Type Vishay | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel | N-Channel | N-Channel | |||
| PD | 1600 milliwatts | 1600 milliwatts | ||||
| TJ | -55 C (-67 F) | -55 to 150 C (-67 to 302 F) |
