Vishay Precision Group Single FETs, MOSFETs SI4874BDY-T1-E3

Description
MOSFET N-CH 30V 12A 8SO
Request a Quote Datasheet
Description
MOSFET N-CH 30V 12A 8SO
Request a Quote Datasheet

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Company
Product
Description
Supplier Links
Single FETs, MOSFETs - SI4874BDY-T1-E3 - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
SI4874BDY-T1-E3
Single FETs, MOSFETs SI4874BDY-T1-E3
MOSFET N-CH 30V 12A 8SO

MOSFET N-CH 30V 12A 8SO

Supplier's Site Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI4874BDY-T1-E3 - 028545-SI4874BDY-T1-E3 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI4874BDY-T1-E3
028545-SI4874BDY-T1-E3
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI4874BDY-T1-E3 028545-SI4874BDY-T1-E3
Manufacturer: Vishay Win Source Part Number: 028545-SI4874BDY-T1- E3 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 1.6W (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 8-SO Dimension: 8-SOIC (0.154", 3.90mm Width) Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 12A (Ta) Gate-Source Threshold Voltage: 3V @ 250μA Max Gate Charge: 25nC @ 4.5V Max Input Capacitance: 3230pF @ 15V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 7 mOhm @ 16A, 10V Popularity: Medium Fake Threat In the Open Market: 43 pct. Supply and Demand Status: Balance

Manufacturer: Vishay
Win Source Part Number: 028545-SI4874BDY-T1-E3
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 1.6W (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 8-SO
Dimension: 8-SOIC (0.154", 3.90mm Width)
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 12A (Ta)
Gate-Source Threshold Voltage: 3V @ 250μA
Max Gate Charge: 25nC @ 4.5V
Max Input Capacitance: 3230pF @ 15V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 7 mOhm @ 16A, 10V
Popularity: Medium
Fake Threat In the Open Market: 43 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Single FETs, MOSFETs - SI4874BDY-T1-E3CT-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SI4874BDY-T1-E3CT-ND
Single FETs, MOSFETs SI4874BDY-T1-E3CT-ND
N-Channel 30V 12A (Ta) 1.6W (Ta) Surface Mount 8-SOIC

N-Channel 30V 12A (Ta) 1.6W (Ta) Surface Mount 8-SOIC

Buy Now Datasheet
Single FETs, MOSFETs - SI4874BDY-T1-E3DKR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SI4874BDY-T1-E3DKR-ND
Single FETs, MOSFETs SI4874BDY-T1-E3DKR-ND
N-Channel 30V 12A (Ta) 1.6W (Ta) Surface Mount 8-SOIC

N-Channel 30V 12A (Ta) 1.6W (Ta) Surface Mount 8-SOIC

Buy Now Datasheet
Single FETs, MOSFETs - SI4874BDY-T1-E3TR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SI4874BDY-T1-E3TR-ND
Single FETs, MOSFETs SI4874BDY-T1-E3TR-ND
N-Channel 30V 12A (Ta) 1.6W (Ta) Surface Mount 8-SOIC

N-Channel 30V 12A (Ta) 1.6W (Ta) Surface Mount 8-SOIC

Buy Now Datasheet
Singapore
SMD 30V 12A SOIC MOSFET Transistor
278-SI4874BDY-T1-E3
SMD 30V 12A SOIC MOSFET Transistor 278-SI4874BDY-T1-E3
30V 12A N-CH MOSFET 7mR SOIC Surface Mount Product overview: SI4874BDY-T1-E3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include SMD, 30V, 12A, SOIC. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, SMD, 30V, 12A, SOIC, MOSFET Transistor. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SI4874BDY-T1-E3 can be used for catalog matching and distributor lookup.

30V 12A N-CH MOSFET 7mR SOIC Surface Mount Product overview: SI4874BDY-T1-E3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include SMD, 30V, 12A, SOIC. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, SMD, 30V, 12A, SOIC, MOSFET Transistor. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SI4874BDY-T1-E3 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - SI4874BDY-T1-E3 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
SI4874BDY-T1-E3
Discrete Semiconductor Products - Transistors - FETs, MOSFETs SI4874BDY-T1-E3
MOSFET N-CH 30V 12A 8SO

MOSFET N-CH 30V 12A 8SO

Supplier's Site
Sheung Wan, Hong Kong
MOSFET 30V 16A 0.007Ohm

MOSFET 30V 16A 0.007Ohm

Buy Now Datasheet
MOSFET N-CH 30V 12A 8-SOIC - 880-SI4874BDY-T1-E3 - Utmel Electronic Limited
Hong Kong, China
MOSFET N-CH 30V 12A 8-SOIC
880-SI4874BDY-T1-E3
MOSFET N-CH 30V 12A 8-SOIC 880-SI4874BDY-T1-E3
MOSFET N-CH 30V 12A 8-SOIC

MOSFET N-CH 30V 12A 8-SOIC

Supplier's Site
N Channel Mosfet, 30V, 16A, Soic; Channel Type Vishay - 51K6967 - Newark, An Avnet Company
Chicago, IL, United States
N Channel Mosfet, 30V, 16A, Soic; Channel Type Vishay
51K6967
N Channel Mosfet, 30V, 16A, Soic; Channel Type Vishay 51K6967
N CHANNEL MOSFET, 30V, 16A, SOIC; Channel Type:N Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:16A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:20V; Gate Source Threshold Voltage Max:3V RoHS Compliant: Yes

N CHANNEL MOSFET, 30V, 16A, SOIC; Channel Type:N Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:16A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:20V; Gate Source Threshold Voltage Max:3V RoHS Compliant: Yes

Supplier's Site

Technical Specifications

  ODG (Origin Data Global) Win Source Electronics DigiKey ERSAELECTRONICS PTE. LTD. Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED Utmel Electronic Limited Newark, An Avnet Company
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET)
Product Number SI4874BDY-T1-E3 028545-SI4874BDY-T1-E3 SI4874BDY-T1-E3CT-ND 278-SI4874BDY-T1-E3 SI4874BDY-T1-E3 SI4874BDY-T1-E3 880-SI4874BDY-T1-E3 51K6967
Product Name Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI4874BDY-T1-E3 Single FETs, MOSFETs SMD 30V 12A SOIC MOSFET Transistor Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET MOSFET N-CH 30V 12A 8-SOIC N Channel Mosfet, 30V, 16A, Soic; Channel Type Vishay
Polarity N-Channel; N-Channel N-Channel; N-Channel N-Channel N-Channel N-Channel
Transistor Technology / Material MOSFET (Metal Oxide) SILICON
V(BR)DSS 30 volts 30 volts 30 volts
IDSS 12000 milliamps 16000 milliamps
PD 1600 milliwatts 1600 milliwatts 1600 milliwatts 1600 milliwatts
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