30V 12A N-CH MOSFET 7mR SOIC Surface Mount Product overview: SI4874BDY-T1-E3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include SMD, 30V, 12A, SOIC. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, SMD, 30V, 12A, SOIC, MOSFET Transistor. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SI4874BDY-T1-E3 can be used for catalog matching and distributor lookup.
MOSFET N-CH 30V 12A 8SO
N-Channel 30V 12A (Ta) 1.6W (Ta) Surface Mount 8-SOIC
N-Channel 30V 12A (Ta) 1.6W (Ta) Surface Mount 8-SOIC
N-Channel 30V 12A (Ta) 1.6W (Ta) Surface Mount 8-SOIC
Manufacturer: Vishay
Win Source Part Number: 028545-SI4874BDY-T1-
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 1.6W (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 8-SO
Dimension: 8-SOIC (0.154", 3.90mm Width)
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 12A (Ta)
Gate-Source Threshold Voltage: 3V @ 250μA
Max Gate Charge: 25nC @ 4.5V
Max Input Capacitance: 3230pF @ 15V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 7 mOhm @ 16A, 10V
Popularity: Medium
Fake Threat In the Open Market: 43 pct.
Supply and Demand Status: Balance
N CHANNEL MOSFET, 30V, 16A, SOIC; Channel Type:N Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:16A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:20V; Gate Source Threshold Voltage Max:3V RoHS Compliant: Yes
MOSFET N-CH 30V 12A 8-SOIC
MOSFET N-CH 30V 12A 8SO
| ERSAELECTRONICS PTE. LTD. | ODG (Origin Data Global) | DigiKey | Win Source Electronics | VAST STOCK CO., LIMITED | Newark, An Avnet Company | Utmel Electronic Limited | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | 278-SI4874BDY-T1-E3 | SI4874BDY-T1-E3 | SI4874BDY-T1-E3CT-ND | 028545-SI4874BDY-T1-E3 | SI4874BDY-T1-E3 | 51K6967 | 880-SI4874BDY-T1-E3 | SI4874BDY-T1-E3 |
| Product Name | SMD 30V 12A SOIC MOSFET Transistor | Single FETs, MOSFETs | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI4874BDY-T1-E3 | MOSFET | N Channel Mosfet, 30V, 16A, Soic; Channel Type Vishay | MOSFET N-CH 30V 12A 8-SOIC | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel | N-Channel; N-Channel | N-Channel | N-Channel; N-Channel | N-Channel | |||
| PD | 1600 milliwatts | 1600 milliwatts | 1600 milliwatts | 1600 milliwatts | ||||
| TJ | -55 C (-67 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | ||||
| Transistor Technology / Material | MOSFET (Metal Oxide) | SILICON | ||||||
| V(BR)DSS | 30 volts | 30 volts | 30 volts |
