MOSFET N-CH 12V 11A 8SO
N-Channel 12V 11A (Ta) 1.6W (Ta) Surface Mount 8-SOIC
N-Channel 12V 11A (Ta) 1.6W (Ta) Surface Mount 8-SOIC
N-Channel 12V 11A (Ta) 1.6W (Ta) Surface Mount 8-SOIC
12V 11A N-CH MOSFET SOIC N 5.5mR RdsOn Product overview: SI4866DY-T1-E3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 12V, 11A, SOIC. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 12V, 11A, SOIC, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SI4866DY-T1-E3 can be used for catalog matching and distributor lookup.
Manufacturer: Vishay
Win Source Part Number: 028544-SI4866DY-T1-E
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 1.6W (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 8-SO
Dimension: 8-SOIC (0.154", 3.90mm Width)
Drain-Source Breakdown Voltage: 12V
Continuous Drain Current at 25°C: 11A (Ta)
Gate-Source Threshold Voltage: 600mV @ 250μA (Min)
Max Gate Charge: 30nC @ 4.5V
Maximum Gate-Source Voltage: ±8V
Maximum Rds On at Id,Vgs: 5.5 mOhm @ 17A, 4.5V
Popularity: Medium
Fake Threat In the Open Market: 45 pct.
Supply and Demand Status: Balance
Channel Type:N Channel; Drain Source Voltage Vds:12V; Continuous Drain Current Id:17A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:4.5V; Gate Source Threshold Voltage Max:600mV; Power Dissipation:3W; No. of Pins:8Pins RoHS Compliant: Yes
N CHANNEL MOSFET, 12V, 17A, SOIC, FULL REEL; Channel Type:N Channel; Drain Source Voltage Vds:12V; Continuous Drain Current Id:17A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:4.5V; Gate Source Threshold Voltage Max:600mVRoHS Compliant: Yes
MOSFET N-CH 12V 11A 8SO
| ODG (Origin Data Global) | DigiKey | ERSAELECTRONICS PTE. LTD. | Win Source Electronics | Newark, An Avnet Company | Newark, An Avnet Company | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | SI4866DY-T1-E3 | SI4866DY-T1-E3TR-ND | 278-SI4866DY-T1-E3 | 028544-SI4866DY-T1-E3 | 85W2150 | 06J7931 | SI4866DY-T1-E3 | SI4866DY-T1-E3 |
| Product Name | Single FETs, MOSFETs | Single FETs, MOSFETs | 12V 11A SOIC MOSFET Transistor | TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI4866DY-T1-E3 | Channel Type Vishay | N Channel Mosfet, 12V, 17A, Soic, Full Reel; Channel Type Vishay | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel; N-Channel | N-Channel | N-Channel | N-Channel; N-Channel | N-Channel | |||
| Transistor Technology / Material | MOSFET (Metal Oxide) | |||||||
| V(BR)DSS | 12 volts | 12 volts | ||||||
| IDSS | 11000 milliamps | 17000 milliamps |
