Vishay Precision Group TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI4866BDY-T1-GE3 SI4866BDY-T1-GE3

Manufacturer: Vishay
Win Source Part Number: 028543-SI4866BDY-T1-GE3
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 2.5W (Ta), 4.45W (Tc)
Family Name: Si4866BDY
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 8-SO
Dimension: 8-SOIC (0.154", 3.90mm Width)
Drain-Source Breakdown Voltage: 12V
Continuous Drain Current at 25°C: 21.5A (Tc)
Gate-Source Threshold Voltage: 1V @ 250μA
Max Gate Charge: 80nC @ 4.5V
Max Input Capacitance: 5020pF @ 6V
Maximum Gate-Source Voltage: ±8V
Maximum Rds On at Id,Vgs: 5.3 mOhm @ 12A, 4.5V
Introduction Date: August 28, 2007
ECCN: EAR99
Estimated EOL Date: Obsolete / End of life
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 53 pct.
Supply and Demand Status: Balance

MOSFET N-CH 12V 21.5A 8SO Product overview: SI4866BDY-T1-GE3 from Vishay / Siliconix is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 12V, 21.5A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 12V, 21.5A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SI4866BDY-T1-GE3 can be used for catalog matching and distributor lookup.

N-Channel 12V 21.5A (Tc) 2.5W (Ta), 4.45W (Tc) Surface Mount 8-SOIC

MOSFET N-CH 12V 21.5A 8SO