Vishay Intertechnology, Inc. 20V 17A MOSFET Transistor SI4864DY-T1-GE3

MOSFET N-CH 20V 17A 8SO Product overview: SI4864DY-T1-GE3 from Vishay / Siliconix is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 20V, 17A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 20V, 17A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SI4864DY-T1-GE3 can be used for catalog matching and distributor lookup.

N-Channel 20V 17A (Ta) 1.6W (Ta) Surface Mount 8-SOIC

N-Channel 20V 17A (Ta) 1.6W (Ta) Surface Mount 8-SOIC

N-Channel 20V 17A (Ta) 1.6W (Ta) Surface Mount 8-SOIC

Win Source Part Number: 1277581-SI4864DY-T1-GE3
Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Series: TrenchFET®
Package: Tape & Reel
Standard Package: 2,500
Mounting: SMD (SMT)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 20 V
Current - Continuous Drain (Id) @ 25°C: 17A (Ta)
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 25A, 4.5V
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 1.6W (Ta)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOIC
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 4.5 V
Vgs (Max): ±8V
Temperature Range - Operating: -55°C ~ 150°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 64 pct.
MSL Level: 1 (Unlimited)
HTSUS: 8541.29.0095
Mfr: Vishay Siliconix
Other Names: SI4864DY-T1-GE3TR,SI4864DY-T1-GE3DKR,SI4864DY-T1-GE3CT,SI4864DY-T1-GE3
Base Product Number: SI4864
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V