Vishay Precision Group TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI4860DY-T1-E3 SI4860DY-T1-E3

Description
Manufacturer: Vishay Win Source Part Number: 107695-SI4860DY-T1-E 3 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 1.6W (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 8-SO Dimension: 8-SOIC (0.154", 3.90mm Width) Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 11A (Ta) Gate-Source Threshold Voltage: 1V @ 250μA (Min) Max Gate Charge: 18nC @ 4.5V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 8 mOhm @ 16A, 10V Popularity: Medium Fake Threat In the Open Market: 68 pct. Supply and Demand Status: Balance
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Description
Manufacturer: Vishay Win Source Part Number: 107695-SI4860DY-T1-E 3 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 1.6W (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 8-SO Dimension: 8-SOIC (0.154", 3.90mm Width) Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 11A (Ta) Gate-Source Threshold Voltage: 1V @ 250μA (Min) Max Gate Charge: 18nC @ 4.5V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 8 mOhm @ 16A, 10V Popularity: Medium Fake Threat In the Open Market: 68 pct. Supply and Demand Status: Balance
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI4860DY-T1-E3 - 107695-SI4860DY-T1-E3 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI4860DY-T1-E3
107695-SI4860DY-T1-E3
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI4860DY-T1-E3 107695-SI4860DY-T1-E3
Manufacturer: Vishay Win Source Part Number: 107695-SI4860DY-T1-E 3 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 1.6W (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 8-SO Dimension: 8-SOIC (0.154", 3.90mm Width) Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 11A (Ta) Gate-Source Threshold Voltage: 1V @ 250μA (Min) Max Gate Charge: 18nC @ 4.5V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 8 mOhm @ 16A, 10V Popularity: Medium Fake Threat In the Open Market: 68 pct. Supply and Demand Status: Balance

Manufacturer: Vishay
Win Source Part Number: 107695-SI4860DY-T1-E3
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 1.6W (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 8-SO
Dimension: 8-SOIC (0.154", 3.90mm Width)
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 11A (Ta)
Gate-Source Threshold Voltage: 1V @ 250μA (Min)
Max Gate Charge: 18nC @ 4.5V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 8 mOhm @ 16A, 10V
Popularity: Medium
Fake Threat In the Open Market: 68 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - SI4860DY-T1-E3 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
SI4860DY-T1-E3
Discrete Semiconductor Products - Transistors - FETs, MOSFETs SI4860DY-T1-E3
MOSFET N-CH 30V 11A 8SO

MOSFET N-CH 30V 11A 8SO

Supplier's Site
MOSFET 30V 16A 1.6W - 880-SI4860DY-T1-E3 - Utmel Electronic Limited
Hong Kong, China
MOSFET 30V 16A 1.6W
880-SI4860DY-T1-E3
MOSFET 30V 16A 1.6W 880-SI4860DY-T1-E3
MOSFET 30V 16A 1.6W

MOSFET 30V 16A 1.6W

Supplier's Site

Technical Specifications

  Win Source Electronics Shenzhen Shengyu Electronics Technology Limited Utmel Electronic Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number 107695-SI4860DY-T1-E3 SI4860DY-T1-E3 880-SI4860DY-T1-E3
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI4860DY-T1-E3 Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET 30V 16A 1.6W
Polarity N-Channel; N-Channel
V(BR)DSS 30 volts 30 volts
PD 1600 milliwatts 1600 milliwatts
TJ -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F)
Package Type SOT3; 8-SO 18 nC @ 4.5 V
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