MOSFET N-CH 30V 11A 8SO Product overview: SI4860DY-T1-E3 from Vishay / Siliconix is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30V, 11A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 11A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SI4860DY-T1-E3 can be used for catalog matching and distributor lookup.
Manufacturer: Vishay
Win Source Part Number: 107695-SI4860DY-T1-E
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 1.6W (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 8-SO
Dimension: 8-SOIC (0.154", 3.90mm Width)
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 11A (Ta)
Gate-Source Threshold Voltage: 1V @ 250μA (Min)
Max Gate Charge: 18nC @ 4.5V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 8 mOhm @ 16A, 10V
Popularity: Medium
Fake Threat In the Open Market: 68 pct.
Supply and Demand Status: Balance
MOSFET N-CH 30V 11A 8SO
| ERSAELECTRONICS PTE. LTD. | Win Source Electronics | Utmel Electronic Limited | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | 278-SI4860DY-T1-E3 | 107695-SI4860DY-T1-E3 | 880-SI4860DY-T1-E3 | SI4860DY-T1-E3 |
| Product Name | 30V 11A MOSFET Transistor | TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI4860DY-T1-E3 | MOSFET 30V 16A 1.6W | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| PD | 1600 milliwatts | 1600 milliwatts | 1600 milliwatts | |
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | |
| Package Type | Tape & Reel (TR) | SOT3; 8-SO | 18 nC @ 4.5 V | |
| Packing Method | Tape & Reel (TR) | Tape Reel; Reel - TR | Tape Reel; Tape & Reel (TR) | Tape Reel; Tape & Reel (TR),Cut Tape (CT),Digi-ReelR |
| Polarity | N-Channel; N-Channel |
