Manufacturer: Vishay
Win Source Part Number: 083896-SI4850EY-T1-G
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 1.7W (Ta)
Family Name: Si4850EY
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: 8-SO
Dimension: 8-SOIC (0.154", 3.90mm Width)
Drain-Source Breakdown Voltage: 60V
Continuous Drain Current at 25°C: 6A (Ta)
Gate-Source Threshold Voltage: 3V @ 250μA
Max Gate Charge: 27nC @ 10V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 22 mOhm @ 6A, 10V
Alternative Parts (Cross-Reference): TSM230N06PQ56 RLG ; RSH065N06GZETB; RSS065N06; RSS065N06TB;
Introduction Date: February 25, 2001
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: 2027
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 39 pct.
Supply and Demand Status: Limited
Application Field: Used in Industrial, Power Management
MOSFET N-Ch 60V 6A Reduced Qg Fast SOIC8
MOSFET N-Ch 60V 6A Reduced Qg Fast SOIC8
MOSFET N-Ch 60V 6A Reduced Qg Fast SOIC8
N-Channel 60V 6A (Ta) 1.7W (Ta) Surface Mount 8-SOIC
N-Channel 60V 6A (Ta) 1.7W (Ta) Surface Mount 8-SOIC
N-Channel 60V 6A (Ta) 1.7W (Ta) Surface Mount 8-SOIC
N-Channel JFET, 60V, 6A, 22mR Rds(on), SOIC Product overview: SI4850EY-T1-GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 60V, 6A, SOIC. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 60V, 6A, SOIC, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SI4850EY-T1-GE3 can be used for catalog matching and distributor lookup.
MOSFET N-CH 60V 6A 8SO
60V 6A 22mΩ@6A,10V 1.7W 3V@250uA null SO-8 MOSFETs ROHS
MOSFET Transistor, N Channel, 6 A, 60 V, 18 mohm, 10 V, 3 V RoHS Compliant: Yes
N CH MOSFET; Channel Type:N Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:6A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:3V; Power Dissipation:1.7W RoHS Compliant: Yes
N CHANNEL MOSFET, 60V, 6A, SOIC; Channel Type:N Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:6A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:3V; Product Range:-RoHS Compliant: Yes
MOSFET N-CH 60V 6A 8SO
| Win Source Electronics | RS Components, Ltd. | RS Components, Ltd. | DigiKey | ERSAELECTRONICS PTE. LTD. | ODG (Origin Data Global) | LCSC Electronics Technology (HK) Limited | VAST STOCK CO., LIMITED | Newark, An Avnet Company | Newark, An Avnet Company | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | 083896-SI4850EY-T1-GE3 | 9194191 | 7879014P | SI4850EY-T1-GE3DKR-ND | 278-SI4850EY-T1-GE3 | SI4850EY-T1-GE3 | SI4850EY-T1-GE3 | SI4850EY-T1-GE3 | 23T8518 | 15R5097 | 84R8062 | SI4850EY-T1-GE3 |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI4850EY-T1-GE3 | MOSFETs | MOSFETs | Single FETs, MOSFETs | N-Channel 60V 6A SOIC MOSFET Transistor | Single FETs, MOSFETs | Triode/MOS Tube/Transistor >> MOSFETs | MOSFET | Mosfet Transistor, N Channel, 6 A, 60 V, 18 Mohm, 10 V, 3 V Rohs Compliant Vishay | N Ch Mosfet; Channel Type Vishay | N Channel Mosfet, 60V, 6A, Soic; Channel Type Vishay | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel; N-Channel | N-Channel | N-Channel | N-Channel | N-Channel; N-Channel | N-Channel | N-Channel | |||||
| V(BR)DSS | 60 volts | 60 volts | 60 volts | |||||||||
| PD | 1700 milliwatts | 1700 milliwatts | 1700 milliwatts | 1700 milliwatts | 1700 milliwatts | |||||||
| TJ | -55 to 175 C (-67 to 347 F) | -55 C (-67 F) | -55 to 175 C (-67 to 347 F) | -55 to 175 C (-67 to 347 F) | ||||||||
| Package Type | SOT3; 8-SO | Soic | SOIC | "8-SOIC (0.154"", 3.90mm Width)" | 8-SOIC (0.154", 3.90mm Width) | SO-8 | TO-3 | TO-3 | TO-3 | 8-SOIC (0.154, 3.90mm Width) |
