MOSFET N-CH 150V 5.5A 8SOIC
N-Channel 150V 5.5A (Tc) 5W (Tc) Surface Mount 8-SOIC
N-Channel 150V 5.5A (Tc) 5W (Tc) Surface Mount 8-SOIC
N-Channel 150V 5.5A (Tc) 5W (Tc) Surface Mount 8-SOIC
Trans MOSFET N-CH 150V 5.5A 8-Pin SOIC N T/R Product overview: SI4848ADY-T1-GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 150V, 5.5A, SOIC. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 150V, 5.5A, SOIC, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SI4848ADY-T1-GE3
Win Source Part Number: 1092885-SI4848ADY-T1
Category: Discrete Semiconductor Products>Transistors
Series: TrenchFET®
Package: Tape & Reel
Standard Package: 2,500
Mounting: SMD (SMT)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 150 V
Current - Continuous Drain (Id) @ 25°C: 5.5A (Tc)
Rds On (Max) @ Id, Vgs: 84mOhm @ 3.9A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 5W (Tc)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOIC
Gate Charge (Qg) (Max) @ Vgs: 9.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 335 pF @ 75 V
Vgs (Max): ±20V
Temperature Range - Operating: -55°C ~ 150°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 83 pct.
MSL Level: 1 (Unlimited)
HTSUS: 8541.29.0095
Mfr: Vishay Siliconix
Other Names: SI4848ADY-T1-GE3DKR,
Base Product Number: SI4848
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
MOSFET N-CH 150V 5.5A 8SOIC
MOSFET, N-CH, 150V, 5.5A, 150DEG C, 5W; Transistor Polarity:N Channel; Continuous Drain Current Id:5.5A; Drain Source Voltage Vds:150V; On Resistance Rds(on):0.070ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power RoHS Compliant: Yes
| ODG (Origin Data Global) | DigiKey | ERSAELECTRONICS PTE. LTD. | Win Source Electronics | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | SI4848ADY-T1-GE3 | SI4848ADY-T1-GE3CT-ND | 278-SI4848ADY-T1-GE3 | 1092885-SI4848ADY-T1-GE3 | SI4848ADY-T1-GE3 | SI4848ADY-T1-GE3 | 78AC6539 |
| Product Name | Single FETs, MOSFETs | Single FETs, MOSFETs | 150V 5.5A SOIC MOSFET Transistor | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET | Mosfet, N-Ch, 150V, 5.5A, 150Deg C, 5W; Transistor Polarity Vishay |
| Polarity | N-Channel; N-Channel | N-Channel | N-Channel | ||||
| Transistor Technology / Material | MOSFET (Metal Oxide) | ||||||
| V(BR)DSS | 150 volts | ||||||
| IDSS | 5500 milliamps | 5500 milliamps | |||||
| PD | 5000 milliwatts | 5000 milliwatts |
