Vishay Intertechnology, Inc. TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI4845DY-T1-E3 SI4845DY-T1-E3

Description
Manufacturer: Vishay Win Source Part Number: 098376-SI4845DY-T1-E 3 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET FET Feature: Schottky Diode (Isolated) Polarity: P-Channel Power Dissipation (Max): 1.75W (Ta), 2.75W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 8-SO Dimension: 8-SOIC (0.154", 3.90mm Width) Drain-Source Breakdown Voltage: 20V Continuous Drain Current at 25°C: 2.7A (Tc) Gate-Source Threshold Voltage: 1.5V @ 250μA Max Gate Charge: 4.5nC @ 4.5V Max Input Capacitance: 312pF @ 10V Maximum Gate-Source Voltage: ±12V Maximum Rds On at Id,Vgs: 210 mOhm @ 2A, 4.5V Popularity: Medium Fake Threat In the Open Market: 50 pct. Supply and Demand Status: Balance
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Description
Manufacturer: Vishay Win Source Part Number: 098376-SI4845DY-T1-E 3 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET FET Feature: Schottky Diode (Isolated) Polarity: P-Channel Power Dissipation (Max): 1.75W (Ta), 2.75W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 8-SO Dimension: 8-SOIC (0.154", 3.90mm Width) Drain-Source Breakdown Voltage: 20V Continuous Drain Current at 25°C: 2.7A (Tc) Gate-Source Threshold Voltage: 1.5V @ 250μA Max Gate Charge: 4.5nC @ 4.5V Max Input Capacitance: 312pF @ 10V Maximum Gate-Source Voltage: ±12V Maximum Rds On at Id,Vgs: 210 mOhm @ 2A, 4.5V Popularity: Medium Fake Threat In the Open Market: 50 pct. Supply and Demand Status: Balance
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TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI4845DY-T1-E3 - 098376-SI4845DY-T1-E3 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI4845DY-T1-E3
098376-SI4845DY-T1-E3
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI4845DY-T1-E3 098376-SI4845DY-T1-E3
Manufacturer: Vishay Win Source Part Number: 098376-SI4845DY-T1-E 3 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET FET Feature: Schottky Diode (Isolated) Polarity: P-Channel Power Dissipation (Max): 1.75W (Ta), 2.75W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 8-SO Dimension: 8-SOIC (0.154", 3.90mm Width) Drain-Source Breakdown Voltage: 20V Continuous Drain Current at 25°C: 2.7A (Tc) Gate-Source Threshold Voltage: 1.5V @ 250μA Max Gate Charge: 4.5nC @ 4.5V Max Input Capacitance: 312pF @ 10V Maximum Gate-Source Voltage: ±12V Maximum Rds On at Id,Vgs: 210 mOhm @ 2A, 4.5V Popularity: Medium Fake Threat In the Open Market: 50 pct. Supply and Demand Status: Balance

Manufacturer: Vishay
Win Source Part Number: 098376-SI4845DY-T1-E3
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
FET Feature: Schottky Diode (Isolated)
Polarity: P-Channel
Power Dissipation (Max): 1.75W (Ta), 2.75W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 8-SO
Dimension: 8-SOIC (0.154", 3.90mm Width)
Drain-Source Breakdown Voltage: 20V
Continuous Drain Current at 25°C: 2.7A (Tc)
Gate-Source Threshold Voltage: 1.5V @ 250μA
Max Gate Charge: 4.5nC @ 4.5V
Max Input Capacitance: 312pF @ 10V
Maximum Gate-Source Voltage: ±12V
Maximum Rds On at Id,Vgs: 210 mOhm @ 2A, 4.5V
Popularity: Medium
Fake Threat In the Open Market: 50 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - SI4845DY-T1-E3 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
SI4845DY-T1-E3
Discrete Semiconductor Products - Transistors - FETs, MOSFETs SI4845DY-T1-E3
MOSFET P-CH 20V 2.7A 8SO

MOSFET P-CH 20V 2.7A 8SO

Supplier's Site

Technical Specifications

  Win Source Electronics Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number 098376-SI4845DY-T1-E3 SI4845DY-T1-E3
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI4845DY-T1-E3 Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity P-Channel; P-Channel
V(BR)DSS 20 volts
PD 1750 to 2750 milliwatts
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