N-Channel JFET, 30V, 28A, 4.2mR Rds(on), SOP-8 Product overview: SI4842BDY-T1-GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 30V, 28A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 28A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SI4842BDY-T1-GE3
N-Channel 30V 28A (Tc) 3W (Ta), 6.25W (Tc) Surface Mount 8-SOIC
N-Channel 30V 28A (Tc) 3W (Ta), 6.25W (Tc) Surface Mount 8-SOIC
N-Channel 30V 28A (Tc) 3W (Ta), 6.25W (Tc) Surface Mount 8-SOIC
Manufacturer: Vishay Siliconix
Win Source Part Number: 794273-SI4842BDY-T1-
Series: TrenchFET
Packaging: Reel package
Operating Temperature Range: -55°C ~ 150°C (TJ)
Package: 8-SOIC (0.154", 3.90mm Width)
Mounting: SMD
Technology: MOSFET
Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
Family Name: SI4842BDY
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Manufacturer Package: 8-SO
Channel Type Type: N
Drain Source Voltage: 30V
Vgs(th) (Maximum) @ Id: 3V @ 250μA
Gate Charge (Qg) (Maximum) @ Vgs: 100nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds: 3650pF @ 15V
Vgs (Maximum): ±20V
Power Dissipation (Maximum): 3W (Ta), 6.25W (Tc)
Rds On (Maximum) @ Id, Vgs: 4.2 mOhm @ 20A, 10V
Alternative Parts (Cross-Reference): PHK31NQ03LT; PHK31NQ03LT,518; UPA2701GR-E2-AT; UPA2701GR-E1-AT;
Introduction Date: June 21, 2006
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: 2022
Halogen Free: Compliant
Popularity: Medium
Fake Threat In the Open Market: 68 pct.
Supply and Demand Status: Limited
MOSFET N-CH 30V 28A 8SO
N CHANNEL MOSFET, 30V, 28A, SOIC; Channel Type:N Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:28A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:20V; Gate Source Threshold Voltage Max:20V RoHS Compliant: Yes
MOSFET 30V 28A 6.25W 4.2mohm @ 10V
MOSFET N-CH 30V 28A 8SO
| ERSAELECTRONICS PTE. LTD. | DigiKey | Win Source Electronics | ODG (Origin Data Global) | Newark, An Avnet Company | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | 278-SI4842BDY-T1-GE3 | SI4842BDY-T1-GE3DKR-ND | 794273-SI4842BDY-T1-GE3 | SI4842BDY-T1-GE3 | 16P3760 | SI4842BDY-T1-GE3 | SI4842BDY-T1-GE3 |
| Product Name | N-Channel 30V 28A MOSFET Transistor | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI4842BDY-T1-GE3 | Single FETs, MOSFETs | N Channel Mosfet, 30V, 28A, Soic; Channel Type Vishay | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel | N-Channel | N-Channel; N-Channel | N-Channel | |||
| PD | 6250 milliwatts | 3000 to 6250 milliwatts | 3000 milliwatts | ||||
| TJ | -55 C (-67 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | ||||
| Package Type | "8-SOIC (0.154"", 3.90mm Width)" | SOT3 | 8-SOIC (0.154", 3.90mm Width) | TO-3 | 8-SOIC (0.154, 3.90mm Width) |
