MOSFET N-CH 30V 28A 8SO
N-CH JFET 30V 28A 4.2mR SO-8 Surface Mount Product overview: SI4842BDY-T1-E3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include SMD, 30V, 28A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, SMD, 30V, 28A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SI4842BDY-T1-E3 can be used for catalog matching and distributor lookup.
N-Channel 30V 28A (Tc) 3W (Ta), 6.25W (Tc) Surface Mount 8-SOIC
N-Channel 30V 28A (Tc) 3W (Ta), 6.25W (Tc) Surface Mount 8-SOIC
N-Channel 30V 28A (Tc) 3W (Ta), 6.25W (Tc) Surface Mount 8-SOIC
Manufacturer: Vishay
Win Source Part Number: 028537-SI4842BDY-T1-
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 3W (Ta), 6.25W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 8-SO
Dimension: 8-SOIC (0.154", 3.90mm Width)
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 28A (Tc)
Gate-Source Threshold Voltage: 3V @ 250μA
Max Gate Charge: 100nC @ 10V
Max Input Capacitance: 3650pF @ 15V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 4.2 mOhm @ 20A, 10V
Popularity: Medium
Fake Threat In the Open Market: 70 pct.
Supply and Demand Status: Balance
MOSFET, N CHANNEL, 30V, 28A, SOIC-8; Channel Type:N Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:28A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:1.4V RoHS Compliant: Yes
N CHANNEL MOSFET, FULL REEL; Channel Type:N Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:28A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:1.4V; Product Range:- RoHS Compliant: Yes
Trans MOSFET N-CH 30V 28A 8-Pin SOIC N T/R
MOSFET N-CH 30V 28A 8SO
MOSFET, N CHANNEL, 30V, 28A, SOIC-8. FREE 2 YEAR RADWELL WARRANTY
| ODG (Origin Data Global) | ERSAELECTRONICS PTE. LTD. | DigiKey | Win Source Electronics | VAST STOCK CO., LIMITED | Newark, An Avnet Company | Utmel Electronic Limited | Shenzhen Shengyu Electronics Technology Limited | Radwell International | |
|---|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | RF Transistors |
| Product Number | SI4842BDY-T1-E3 | 278-SI4842BDY-T1-E3 | SI4842BDY-T1-E3CT-ND | 028537-SI4842BDY-T1-E3 | SI4842BDY-T1-E3 | 05W6951 | 880-SI4842BDY-T1-E3 | SI4842BDY-T1-E3 | 22271248 |
| Product Name | Single FETs, MOSFETs | SMD 30V 28A MOSFET Transistor | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI4842BDY-T1-E3 | MOSFET | Mosfet, N Channel, 30V, 28A, Soic-8; Channel Type Vishay | Trans MOSFET N-CH 30V 28A 8-Pin SOIC N T/R | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Transistor |
| Polarity | N-Channel; N-Channel | N-Channel | N-Channel | N-Channel; N-Channel | N-Channel | ||||
| Transistor Technology / Material | MOSFET (Metal Oxide) | SILICON | |||||||
| V(BR)DSS | 30 volts | 30 volts | 30 volts | ||||||
| IDSS | 28000 milliamps | 28000 milliamps | |||||||
| PD | 3000 milliwatts | 6250 milliwatts | 3000 to 6250 milliwatts | 6250 milliwatts |
