Vishay Precision Group TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI4842BDY-T1-E3 SI4842BDY-T1-E3

Description
Manufacturer: Vishay Win Source Part Number: 028537-SI4842BDY-T1- E3 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 3W (Ta), 6.25W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 8-SO Dimension: 8-SOIC (0.154", 3.90mm Width) Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 28A (Tc) Gate-Source Threshold Voltage: 3V @ 250μA Max Gate Charge: 100nC @ 10V Max Input Capacitance: 3650pF @ 15V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 4.2 mOhm @ 20A, 10V Popularity: Medium Fake Threat In the Open Market: 70 pct. Supply and Demand Status: Balance
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Description
Manufacturer: Vishay Win Source Part Number: 028537-SI4842BDY-T1- E3 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 3W (Ta), 6.25W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 8-SO Dimension: 8-SOIC (0.154", 3.90mm Width) Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 28A (Tc) Gate-Source Threshold Voltage: 3V @ 250μA Max Gate Charge: 100nC @ 10V Max Input Capacitance: 3650pF @ 15V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 4.2 mOhm @ 20A, 10V Popularity: Medium Fake Threat In the Open Market: 70 pct. Supply and Demand Status: Balance
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI4842BDY-T1-E3 - 028537-SI4842BDY-T1-E3 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI4842BDY-T1-E3
028537-SI4842BDY-T1-E3
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI4842BDY-T1-E3 028537-SI4842BDY-T1-E3
Manufacturer: Vishay Win Source Part Number: 028537-SI4842BDY-T1- E3 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 3W (Ta), 6.25W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 8-SO Dimension: 8-SOIC (0.154", 3.90mm Width) Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 28A (Tc) Gate-Source Threshold Voltage: 3V @ 250μA Max Gate Charge: 100nC @ 10V Max Input Capacitance: 3650pF @ 15V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 4.2 mOhm @ 20A, 10V Popularity: Medium Fake Threat In the Open Market: 70 pct. Supply and Demand Status: Balance

Manufacturer: Vishay
Win Source Part Number: 028537-SI4842BDY-T1-E3
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 3W (Ta), 6.25W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 8-SO
Dimension: 8-SOIC (0.154", 3.90mm Width)
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 28A (Tc)
Gate-Source Threshold Voltage: 3V @ 250μA
Max Gate Charge: 100nC @ 10V
Max Input Capacitance: 3650pF @ 15V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 4.2 mOhm @ 20A, 10V
Popularity: Medium
Fake Threat In the Open Market: 70 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Singapore
SMD 30V 28A MOSFET Transistor
278-SI4842BDY-T1-E3
SMD 30V 28A MOSFET Transistor 278-SI4842BDY-T1-E3
N-CH JFET 30V 28A 4.2mR SO-8 Surface Mount Product overview: SI4842BDY-T1-E3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include SMD, 30V, 28A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, SMD, 30V, 28A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SI4842BDY-T1-E3 can be used for catalog matching and distributor lookup.

N-CH JFET 30V 28A 4.2mR SO-8 Surface Mount Product overview: SI4842BDY-T1-E3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include SMD, 30V, 28A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, SMD, 30V, 28A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SI4842BDY-T1-E3 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Single FETs, MOSFETs - SI4842BDY-T1-E3 - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
SI4842BDY-T1-E3
Single FETs, MOSFETs SI4842BDY-T1-E3
MOSFET N-CH 30V 28A 8SO

MOSFET N-CH 30V 28A 8SO

Supplier's Site Datasheet
Single FETs, MOSFETs - SI4842BDY-T1-E3CT-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SI4842BDY-T1-E3CT-ND
Single FETs, MOSFETs SI4842BDY-T1-E3CT-ND
N-Channel 30V 28A (Tc) 3W (Ta), 6.25W (Tc) Surface Mount 8-SOIC

N-Channel 30V 28A (Tc) 3W (Ta), 6.25W (Tc) Surface Mount 8-SOIC

Buy Now Datasheet
Single FETs, MOSFETs - SI4842BDY-T1-E3TR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SI4842BDY-T1-E3TR-ND
Single FETs, MOSFETs SI4842BDY-T1-E3TR-ND
N-Channel 30V 28A (Tc) 3W (Ta), 6.25W (Tc) Surface Mount 8-SOIC

N-Channel 30V 28A (Tc) 3W (Ta), 6.25W (Tc) Surface Mount 8-SOIC

Buy Now Datasheet
Single FETs, MOSFETs - SI4842BDY-T1-E3DKR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SI4842BDY-T1-E3DKR-ND
Single FETs, MOSFETs SI4842BDY-T1-E3DKR-ND
N-Channel 30V 28A (Tc) 3W (Ta), 6.25W (Tc) Surface Mount 8-SOIC

N-Channel 30V 28A (Tc) 3W (Ta), 6.25W (Tc) Surface Mount 8-SOIC

Buy Now Datasheet
Mosfet, N Channel, 30V, 28A, Soic-8; Channel Type Vishay - 05W6951 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet, N Channel, 30V, 28A, Soic-8; Channel Type Vishay
05W6951
Mosfet, N Channel, 30V, 28A, Soic-8; Channel Type Vishay 05W6951
MOSFET, N CHANNEL, 30V, 28A, SOIC-8; Channel Type:N Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:28A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:1.4V RoHS Compliant: Yes

MOSFET, N CHANNEL, 30V, 28A, SOIC-8; Channel Type:N Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:28A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:1.4V RoHS Compliant: Yes

Supplier's Site
N Channel Mosfet, Full Reel; Channel Type Vishay - 22M3754 - Newark, An Avnet Company
Chicago, IL, United States
N Channel Mosfet, Full Reel; Channel Type Vishay
22M3754
N Channel Mosfet, Full Reel; Channel Type Vishay 22M3754
N CHANNEL MOSFET, FULL REEL; Channel Type:N Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:28A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:1.4V; Product Range:- RoHS Compliant: Yes

N CHANNEL MOSFET, FULL REEL; Channel Type:N Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:28A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:1.4V; Product Range:- RoHS Compliant: Yes

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - SI4842BDY-T1-E3 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
SI4842BDY-T1-E3
Discrete Semiconductor Products - Transistors - FETs, MOSFETs SI4842BDY-T1-E3
MOSFET N-CH 30V 28A 8SO

MOSFET N-CH 30V 28A 8SO

Supplier's Site
Transistor - 22271248 - Radwell International
Willingboro, NJ, United States
Transistor
22271248
Transistor 22271248
MOSFET, N CHANNEL, 30V, 28A, SOIC-8. FREE 2 YEAR RADWELL WARRANTY

MOSFET, N CHANNEL, 30V, 28A, SOIC-8. FREE 2 YEAR RADWELL WARRANTY

Supplier's Site
Sheung Wan, Hong Kong
MOSFET 30V 23A 3.5W

MOSFET 30V 23A 3.5W

Buy Now Datasheet
Trans MOSFET N-CH 30V 28A 8-Pin SOIC N T/R - 880-SI4842BDY-T1-E3 - Utmel Electronic Limited
Hong Kong, China
Trans MOSFET N-CH 30V 28A 8-Pin SOIC N T/R
880-SI4842BDY-T1-E3
Trans MOSFET N-CH 30V 28A 8-Pin SOIC N T/R 880-SI4842BDY-T1-E3
Trans MOSFET N-CH 30V 28A 8-Pin SOIC N T/R

Trans MOSFET N-CH 30V 28A 8-Pin SOIC N T/R

Supplier's Site

Technical Specifications

  Win Source Electronics ERSAELECTRONICS PTE. LTD. ODG (Origin Data Global) DigiKey Newark, An Avnet Company Shenzhen Shengyu Electronics Technology Limited Radwell International VAST STOCK CO., LIMITED Utmel Electronic Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors RF Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET)
Product Number 028537-SI4842BDY-T1-E3 278-SI4842BDY-T1-E3 SI4842BDY-T1-E3 SI4842BDY-T1-E3CT-ND 05W6951 SI4842BDY-T1-E3 22271248 SI4842BDY-T1-E3 880-SI4842BDY-T1-E3
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI4842BDY-T1-E3 SMD 30V 28A MOSFET Transistor Single FETs, MOSFETs Single FETs, MOSFETs Mosfet, N Channel, 30V, 28A, Soic-8; Channel Type Vishay Discrete Semiconductor Products - Transistors - FETs, MOSFETs Transistor MOSFET Trans MOSFET N-CH 30V 28A 8-Pin SOIC N T/R
Polarity N-Channel; N-Channel N-Channel N-Channel; N-Channel N-Channel N-Channel
V(BR)DSS 30 volts 30 volts 30 volts
PD 3000 to 6250 milliwatts 6250 milliwatts 3000 milliwatts 6250 milliwatts
TJ -55 to 150 C (-67 to 302 F) -55 C (-67 F) -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F)
Package Type SOT3; 8-SO 8-SOIC (0.154", 3.90mm Width) "8-SOIC (0.154"", 3.90mm Width)" TO-3 8-SOIC (0.154, 3.90mm Width)
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