Vishay Intertechnology, Inc. TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI4840DY-T1-E3 SI4840DY-T1-E3

Description
Manufacturer: Vishay Win Source Part Number: 100456-SI4840DY-T1-E 3 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 1.56W (Ta) Family Name: Si4840DY Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 8-SO Dimension: 8-SOIC (0.154", 3.90mm Width) Drain-Source Breakdown Voltage: 40V Continuous Drain Current at 25°C: 10A (Ta) Gate-Source Threshold Voltage: 3V @ 250μA Max Gate Charge: 28nC @ 5V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 9 mOhm @ 14A, 10V Alternative Parts (Cross-Reference): FDS4780-NL; FDS4780; AP9467AGM-HF; TPC8052-H; Introduction Date: May 11, 2000 ECCN: EAR99 Country of Origin: China Estimated EOL Date: Obsolete / End of life Halogen Free: Not Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 66 pct. Supply and Demand Status: Sufficient Application Field: Used in Industrial, Power Management
  • TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI4840DY-T1-E3 - 100456-SI4840DY-T1-E3 - Win Source Electronics
    Win Source Electronics
  • Single FETs, MOSFETs - SI4840DY-T1-E3 - ODG (Origin Data Global)
    ODG (Origin Data Global)
  • MOSFET N-CH 40V 10A 8-SOIC - 880-SI4840DY-T1-E3 - Utmel Electronic Limited
    Utmel Electronic Limited
  • MOSFET, Power;N-Ch;VDSS 40V;RDS(ON) 0.0075Ohm;ID 10A;SO-8;PD 1.56W;VGS +/-20V - 70026069 - Allied Electronics, Inc.
    Allied Electronics, Inc.
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - SI4840DY-T1-E3 - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
Request a Quote Datasheet
Description
Manufacturer: Vishay Win Source Part Number: 100456-SI4840DY-T1-E 3 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 1.56W (Ta) Family Name: Si4840DY Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 8-SO Dimension: 8-SOIC (0.154", 3.90mm Width) Drain-Source Breakdown Voltage: 40V Continuous Drain Current at 25°C: 10A (Ta) Gate-Source Threshold Voltage: 3V @ 250μA Max Gate Charge: 28nC @ 5V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 9 mOhm @ 14A, 10V Alternative Parts (Cross-Reference): FDS4780-NL; FDS4780; AP9467AGM-HF; TPC8052-H; Introduction Date: May 11, 2000 ECCN: EAR99 Country of Origin: China Estimated EOL Date: Obsolete / End of life Halogen Free: Not Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 66 pct. Supply and Demand Status: Sufficient Application Field: Used in Industrial, Power Management
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI4840DY-T1-E3 - 100456-SI4840DY-T1-E3 - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI4840DY-T1-E3
100456-SI4840DY-T1-E3
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI4840DY-T1-E3 100456-SI4840DY-T1-E3
Manufacturer: Vishay Win Source Part Number: 100456-SI4840DY-T1-E 3 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 1.56W (Ta) Family Name: Si4840DY Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 8-SO Dimension: 8-SOIC (0.154", 3.90mm Width) Drain-Source Breakdown Voltage: 40V Continuous Drain Current at 25°C: 10A (Ta) Gate-Source Threshold Voltage: 3V @ 250μA Max Gate Charge: 28nC @ 5V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 9 mOhm @ 14A, 10V Alternative Parts (Cross-Reference): FDS4780-NL; FDS4780; AP9467AGM-HF; TPC8052-H; Introduction Date: May 11, 2000 ECCN: EAR99 Country of Origin: China Estimated EOL Date: Obsolete / End of life Halogen Free: Not Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 66 pct. Supply and Demand Status: Sufficient Application Field: Used in Industrial, Power Management

Manufacturer: Vishay
Win Source Part Number: 100456-SI4840DY-T1-E3
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 1.56W (Ta)
Family Name: Si4840DY
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 8-SO
Dimension: 8-SOIC (0.154", 3.90mm Width)
Drain-Source Breakdown Voltage: 40V
Continuous Drain Current at 25°C: 10A (Ta)
Gate-Source Threshold Voltage: 3V @ 250μA
Max Gate Charge: 28nC @ 5V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 9 mOhm @ 14A, 10V
Alternative Parts (Cross-Reference): FDS4780-NL; FDS4780; AP9467AGM-HF; TPC8052-H;
Introduction Date: May 11, 2000
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: Obsolete / End of life
Halogen Free: Not Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 66 pct.
Supply and Demand Status: Sufficient
Application Field: Used in Industrial, Power Management

Buy Now Datasheet
Single FETs, MOSFETs - SI4840DY-T1-E3 - ODG (Origin Data Global)
ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
SI4840DY-T1-E3
Single FETs, MOSFETs SI4840DY-T1-E3
MOSFET N-CH 40V 10A 8SO

MOSFET N-CH 40V 10A 8SO

Supplier's Site Datasheet
MOSFET N-CH 40V 10A 8-SOIC - 880-SI4840DY-T1-E3 - Utmel Electronic Limited
Utmel Electronic Limited
Hong Kong, China
MOSFET N-CH 40V 10A 8-SOIC
880-SI4840DY-T1-E3
MOSFET N-CH 40V 10A 8-SOIC 880-SI4840DY-T1-E3
MOSFET N-CH 40V 10A 8-SOIC

MOSFET N-CH 40V 10A 8-SOIC

Supplier's Site
MOSFET, Power;N-Ch;VDSS 40V;RDS(ON) 0.0075Ohm;ID 10A;SO-8;PD 1.56W;VGS +/-20V - 70026069 - Allied Electronics, Inc.
Allied Electronics, Inc.
Fort Worth, TX, USA
MOSFET, Power;N-Ch;VDSS 40V;RDS(ON) 0.0075Ohm;ID 10A;SO-8;PD 1.56W;VGS +/-20V
70026069
MOSFET, Power;N-Ch;VDSS 40V;RDS(ON) 0.0075Ohm;ID 10A;SO-8;PD 1.56W;VGS +/-20V 70026069
MOSFET, Power;N-Ch;VDSS 40V;RDS(ON) 0.0075Ohm;ID 10A;SO-8;PD 1.56W;VGS +/-20V

MOSFET, Power;N-Ch;VDSS 40V;RDS(ON) 0.0075Ohm;ID 10A;SO-8;PD 1.56W;VGS +/-20V

Supplier's Site
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - SI4840DY-T1-E3 - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
SI4840DY-T1-E3
Discrete Semiconductor Products - Transistors - FETs, MOSFETs SI4840DY-T1-E3
MOSFET N-CH 40V 10A 8SO

MOSFET N-CH 40V 10A 8SO

Supplier's Site

Technical Specifications

  Win Source Electronics ODG (Origin Data Global) Utmel Electronic Limited Allied Electronics, Inc. Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number 100456-SI4840DY-T1-E3 SI4840DY-T1-E3 880-SI4840DY-T1-E3 70026069 SI4840DY-T1-E3
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI4840DY-T1-E3 Single FETs, MOSFETs MOSFET N-CH 40V 10A 8-SOIC MOSFET, Power;N-Ch;VDSS 40V;RDS(ON) 0.0075Ohm;ID 10A;SO-8;PD 1.56W;VGS +/-20V Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel; N-Channel N-Channel; N-Channel N-Channel
V(BR)DSS 40 volts 40 volts 40 volts 40 volts
PD 1560 milliwatts 1560 milliwatts 1560 milliwatts 1560 milliwatts
TJ -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F)
Package Type SOT3; 8-SO 8-SOIC (0.154", 3.90mm Width) SO-8
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