Manufacturer: Vishay
Win Source Part Number: 100456-SI4840DY-T1-E
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 1.56W (Ta)
Family Name: Si4840DY
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 8-SO
Dimension: 8-SOIC (0.154", 3.90mm Width)
Drain-Source Breakdown Voltage: 40V
Continuous Drain Current at 25°C: 10A (Ta)
Gate-Source Threshold Voltage: 3V @ 250μA
Max Gate Charge: 28nC @ 5V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 9 mOhm @ 14A, 10V
Alternative Parts (Cross-Reference): FDS4780-NL; FDS4780; AP9467AGM-HF; TPC8052-H;
Introduction Date: May 11, 2000
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: Obsolete / End of life
Halogen Free: Not Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 66 pct.
Supply and Demand Status: Sufficient
Application Field: Used in Industrial, Power Management
MOSFET N-CH 40V 10A 8SO
MOSFET N-CH 40V 10A 8SO
MOSFET, Power;N-Ch;VDSS 40V;RDS(ON) 0.0075Ohm;ID 10A;SO-8;PD 1.56W;VGS +/-20V
MOSFET N-CH 40V 10A 8-SOIC
| Win Source Electronics | ODG (Origin Data Global) | Shenzhen Shengyu Electronics Technology Limited | Allied Electronics, Inc. | Utmel Electronic Limited | |
|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 100456-SI4840DY-T1-E3 | SI4840DY-T1-E3 | SI4840DY-T1-E3 | 70026069 | 880-SI4840DY-T1-E3 |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI4840DY-T1-E3 | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET, Power;N-Ch;VDSS 40V;RDS(ON) 0.0075Ohm;ID 10A;SO-8;PD 1.56W;VGS +/-20V | MOSFET N-CH 40V 10A 8-SOIC |
| Polarity | N-Channel; N-Channel | N-Channel; N-Channel | N-Channel | ||
| V(BR)DSS | 40 volts | 40 volts | 40 volts | 40 volts | |
| PD | 1560 milliwatts | 1560 milliwatts | 1560 milliwatts | 1560 milliwatts | |
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | ||
| Package Type | SOT3; 8-SO | 8-SOIC (0.154", 3.90mm Width) | SO-8 |