MOSFET N-CH 40V 19A 8SO
Manufacturer: Vishay
Win Source Part Number: 138403-SI4840BDY-T1-
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 2.5W (Ta), 6W (Tc)
Family Name: Si4840BDY
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 8-SO
Dimension: 8-SOIC (0.154", 3.90mm Width)
Drain-Source Breakdown Voltage: 40V
Continuous Drain Current at 25°C: 19A (Tc)
Gate-Source Threshold Voltage: 3V @ 250μA
Max Gate Charge: 50nC @ 10V
Max Input Capacitance: 2000pF @ 20V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 9 mOhm @ 12.4A, 10V
Alternative Parts (Cross-Reference): FDS4780-NL; FDS4780; AP9467AGM-HF; TPC8052-H;
Introduction Date: February 18, 2008
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: 2027
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 56 pct.
Supply and Demand Status: Limited
Quantity per package: 2,500
N-Channel 40V 19A (Tc) 2.5W (Ta), 6W (Tc) Surface Mount 8-SOIC
N-Channel 40V 19A (Tc) 2.5W (Ta), 6W (Tc) Surface Mount 8-SOIC
N-Channel 40V 19A (Tc) 2.5W (Ta), 6W (Tc) Surface Mount 8-SOIC
IC, TRANSISTOR, MOSFET, N-CHANNEL, 40V, 19A, 6W, 8-SOIC, 3.9MM WIDE. FREE 2 YEAR RADWELL WARRANTY
MOSFET, N-CH, 40V, 19A, 150DEG C, 6W; Channel Type:N Channel; Drain Source Voltage Vds:40V; Continuous Drain Current Id:19A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:1V RoHS Compliant: Yes
MOSFET, N CHANNEL, 40V, 19A, SOIC-8, FULL REEL; Channel Type:N Channel; Drain Source Voltage Vds:40V; Continuous Drain Current Id:19A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:1V RoHS Compliant: Yes
MOSFET N-CH 40V 19A 8SO
| ODG (Origin Data Global) | Win Source Electronics | DigiKey | Radwell International | Newark, An Avnet Company | Newark, An Avnet Company | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | SI4840BDY-T1-E3 | 138403-SI4840BDY-T1-E3 | SI4840BDY-T1-E3TR-ND | 39130423 | 40P0805 | 33P5266 | SI4840BDY-T1-E3 | SI4840BDY-T1-E3 |
| Product Name | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI4840BDY-T1-E3 | Single FETs, MOSFETs | Transistor | Mosfet, N-Ch, 40V, 19A, 150Deg C, 6W; Channel Type Vishay | Mosfet, N Channel, 40V, 19A, Soic-8, Full Reel; Channel Type Vishay | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel; N-Channel | N-Channel; N-Channel | N-Channel | N-Channel | ||||
| Transistor Technology / Material | MOSFET (Metal Oxide) | |||||||
| V(BR)DSS | 40 volts | 40 volts | ||||||
| IDSS | 19000 milliamps | 19000 milliamps | 19000 milliamps |
