Manufacturer: Vishay
Win Source Part Number: 028533-SI4835DDY-T1-
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 2.5W (Ta), 5.6W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 8-SO
Dimension: 8-SOIC (0.154", 3.90mm Width)
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 13A (Tc)
Gate-Source Threshold Voltage: 3V @ 250μA
Max Gate Charge: 65nC @ 10V
Max Input Capacitance: 1960pF @ 15V
Maximum Gate-Source Voltage: ±25V
Maximum Rds On at Id,Vgs: 18 mOhm @ 10A, 10V
Popularity: Medium
Fake Threat In the Open Market: 63 pct.
Supply and Demand Status: Sufficient
P-Channel 30V 13A (Tc) 2.5W (Ta), 5.6W (Tc) Surface Mount 8-SOIC
P-Channel 30V 13A (Tc) 2.5W (Ta), 5.6W (Tc) Surface Mount 8-SOIC
P-Channel 30V 13A (Tc) 2.5W (Ta), 5.6W (Tc) Surface Mount 8-SOIC
MOSFET P-CH 30V 13A 8SO
MOSFET P-CH 30V 13A 8SO
P CHANNEL MOSFET, -30V, 13A, SOIC; Channel Type:P Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:13A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:25V; Gate Source Threshold Voltage Max:3V RoHS Compliant: Yes
MOSFET, P CHANNEL, -30V, -13A, SOIC-8, FULL REEL; Channel Type:P Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:13A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Power Dissipation:5.6W RoHS Compliant: Yes
| Win Source Electronics | DigiKey | ODG (Origin Data Global) | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | Newark, An Avnet Company | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 028533-SI4835DDY-T1-E3 | SI4835DDY-T1-E3TR-ND | SI4835DDY-T1-E3 | SI4835DDY-T1-E3 | 16P3759 | 29X0539 | SI4835DDY-T1-E3 |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI4835DDY-T1-E3 | Single FETs, MOSFETs | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | P Channel Mosfet, -30V, 13A, Soic; Channel Type Vishay | Mosfet, P Channel, -30V, -13A, Soic-8, Full Reel; Channel Type Vishay | MOSFET |
| Polarity | P-Channel; P-Channel | P-Channel | P-Channel; P-Channel | P-Channel | P-Channel | ||
| V(BR)DSS | 30 volts | 30 volts | |||||
| PD | 2500 to 5600 milliwatts | 2500 milliwatts | 5600 milliwatts | ||||
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) |
