Vishay Intertechnology, Inc. TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI4833ADYT1GE3 SI4833ADYT1GE3

Manufacturer: Vishay Storage Condition: Dry storage cabinet & Humidity protection package Win Source Part Number: 1092878-SI4833ADYT1G E3 Length: 5 mm Mounting: SMD (SMT) Drain to Source Voltage (Vdss): 30 V Number of Elements: 1 Input Capacitance: 750 pF Height: 1.55 mm Weight: 186.993455 mg Number of Channels: 1 Number of Pins: 8 Width: 4 mm Rise Time: 11 ns Fall Time: 8 ns Categories: Transistors - FETs, MOSFETs - RF Case / Package: SOIC Alternative Parts (Cross-Reference): SI4833ADYT1GE3SI4833 ADY-T1-GE3; Popularity: Low Fake Threat In the Open Market: 34 pct. Supply and Demand Status: Shortage Maximum Operating Temperature: 150 °C Mount: Surface Mount RoHS: Compliant Radiation Hardening: No Min Operating Temperature: -55 °C Max Power Dissipation: 2.75 W Turn-On Delay Time: 7 ns Continuous Drain Current (ID): 3.85 A Drain to Source Breakdown Voltage: -30 V Turn-Off Delay Time: 19 ns Drain to Source Resistance: 72 mΩ Gate to Source Voltage (Vgs): 20 V Rds On Max: 72 mΩ