Vishay Intertechnology, Inc. TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI4833ADY-T1-E3 SI4833ADY-T1-E3

Description
Manufacturer: Vishay Win Source Part Number: 124682-SI4833ADY-T1- E3 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET FET Feature: Schottky Diode (Isolated) Polarity: P-Channel Power Dissipation (Max): 1.93W (Ta), 2.75W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 8-SO Dimension: 8-SOIC (0.154", 3.90mm Width) Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 4.6A (Tc) Gate-Source Threshold Voltage: 2.5V @ 250μA Max Gate Charge: 15nC @ 10V Max Input Capacitance: 750pF @ 15V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 72 mOhm @ 3.6A, 10V Popularity: Medium Fake Threat In the Open Market: 36 pct. Supply and Demand Status: Limited
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Description
Manufacturer: Vishay Win Source Part Number: 124682-SI4833ADY-T1- E3 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET FET Feature: Schottky Diode (Isolated) Polarity: P-Channel Power Dissipation (Max): 1.93W (Ta), 2.75W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 8-SO Dimension: 8-SOIC (0.154", 3.90mm Width) Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 4.6A (Tc) Gate-Source Threshold Voltage: 2.5V @ 250μA Max Gate Charge: 15nC @ 10V Max Input Capacitance: 750pF @ 15V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 72 mOhm @ 3.6A, 10V Popularity: Medium Fake Threat In the Open Market: 36 pct. Supply and Demand Status: Limited
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Suppliers

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Product
Description
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TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI4833ADY-T1-E3 - 124682-SI4833ADY-T1-E3 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI4833ADY-T1-E3
124682-SI4833ADY-T1-E3
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI4833ADY-T1-E3 124682-SI4833ADY-T1-E3
Manufacturer: Vishay Win Source Part Number: 124682-SI4833ADY-T1- E3 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET FET Feature: Schottky Diode (Isolated) Polarity: P-Channel Power Dissipation (Max): 1.93W (Ta), 2.75W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 8-SO Dimension: 8-SOIC (0.154", 3.90mm Width) Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 4.6A (Tc) Gate-Source Threshold Voltage: 2.5V @ 250μA Max Gate Charge: 15nC @ 10V Max Input Capacitance: 750pF @ 15V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 72 mOhm @ 3.6A, 10V Popularity: Medium Fake Threat In the Open Market: 36 pct. Supply and Demand Status: Limited

Manufacturer: Vishay
Win Source Part Number: 124682-SI4833ADY-T1-E3
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
FET Feature: Schottky Diode (Isolated)
Polarity: P-Channel
Power Dissipation (Max): 1.93W (Ta), 2.75W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 8-SO
Dimension: 8-SOIC (0.154", 3.90mm Width)
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 4.6A (Tc)
Gate-Source Threshold Voltage: 2.5V @ 250μA
Max Gate Charge: 15nC @ 10V
Max Input Capacitance: 750pF @ 15V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 72 mOhm @ 3.6A, 10V
Popularity: Medium
Fake Threat In the Open Market: 36 pct.
Supply and Demand Status: Limited

Buy Now Datasheet
Single FETs, MOSFETs - SI4833ADY-T1-E3TR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SI4833ADY-T1-E3TR-ND
Single FETs, MOSFETs SI4833ADY-T1-E3TR-ND
P-Channel 30V 4.6A (Tc) 1.93W (Ta), 2.75W (Tc) Surface Mount 8-SOIC

P-Channel 30V 4.6A (Tc) 1.93W (Ta), 2.75W (Tc) Surface Mount 8-SOIC

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - SI4833ADY-T1-E3 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
SI4833ADY-T1-E3
Discrete Semiconductor Products - Transistors - FETs, MOSFETs SI4833ADY-T1-E3
MOSFET P-CH 30V 4.6A 8SO

MOSFET P-CH 30V 4.6A 8SO

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Technical Specifications

  Win Source Electronics DigiKey Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors RF Transistors
Product Number 124682-SI4833ADY-T1-E3 SI4833ADY-T1-E3TR-ND SI4833ADY-T1-E3
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI4833ADY-T1-E3 Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity P-Channel; P-Channel P-Channel
V(BR)DSS 30 volts
PD 1930 to 2750 milliwatts
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