Vishay Intertechnology, Inc. Single FETs, MOSFETs SI4831DY-T1-E3

Description
P-Channel 30V 5A (Ta) 2W (Ta) Surface Mount 8-SOIC
Request a Quote Datasheet
Description
P-Channel 30V 5A (Ta) 2W (Ta) Surface Mount 8-SOIC
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - SI4831DY-T1-E3TR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SI4831DY-T1-E3TR-ND
Single FETs, MOSFETs SI4831DY-T1-E3TR-ND
P-Channel 30V 5A (Ta) 2W (Ta) Surface Mount 8-SOIC

P-Channel 30V 5A (Ta) 2W (Ta) Surface Mount 8-SOIC

Buy Now Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI4831DY-T1-E3 - 1096015-SI4831DY-T1-E3 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI4831DY-T1-E3
1096015-SI4831DY-T1-E3
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI4831DY-T1-E3 1096015-SI4831DY-T1-E3
Manufacturer: Vishay Win Source Part Number: 1096015-SI4831DY-T1- E3 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET FET Feature: Schottky Diode (Isolated) Polarity: P-Channel Power Dissipation (Max): 2W (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 8-SO Dimension: 8-SOIC (0.154", 3.90mm Width) Drain-Source Breakdown Voltage: 30V Gate-Source Threshold Voltage: 1V @ 250μA (Min) Max Gate Charge: 20nC @ 5V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 45 mOhm @ 5A, 10V Popularity: Medium Fake Threat In the Open Market: 47 pct. Supply and Demand Status: Balance

Manufacturer: Vishay
Win Source Part Number: 1096015-SI4831DY-T1-E3
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
FET Feature: Schottky Diode (Isolated)
Polarity: P-Channel
Power Dissipation (Max): 2W (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 8-SO
Dimension: 8-SOIC (0.154", 3.90mm Width)
Drain-Source Breakdown Voltage: 30V
Gate-Source Threshold Voltage: 1V @ 250μA (Min)
Max Gate Charge: 20nC @ 5V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 45 mOhm @ 5A, 10V
Popularity: Medium
Fake Threat In the Open Market: 47 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - SI4831DY-T1-E3 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
SI4831DY-T1-E3
Discrete Semiconductor Products - Transistors - FETs, MOSFETs SI4831DY-T1-E3
MOSFET P-CH 30V 5A 8-SOIC

MOSFET P-CH 30V 5A 8-SOIC

Supplier's Site

Technical Specifications

  DigiKey Win Source Electronics Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number SI4831DY-T1-E3TR-ND 1096015-SI4831DY-T1-E3 SI4831DY-T1-E3
Product Name Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI4831DY-T1-E3 Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity P-Channel P-Channel; P-Channel
Package Type "8-SOIC (0.154"", 3.90mm Width)" SOT3; 8-SO
V(BR)DSS 30 volts
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