MOSFET 2N-CH 30V 8A 8SOIC Product overview: SI4830CDY-T1-E3 from Vishay / Siliconix is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30V, 8A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 8A, MOSFET Transistor, FET, MOSFET Arrays. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 289-SI4830CDY-T1-E3 can be used for catalog matching and distributor lookup.
Mosfet Array 2 N-Channel (Half Bridge) 30V 8A 2.9W Surface Mount 8-SOIC
MOSFET 2N-CH 30V 8A 8-SOIC
Manufacturer: Vishay
Win Source Part Number: 1096014-SI4830CDY-T1
Packaging: Reel - TR
Mounting: SMD (SMT)
FET Type: 2 N-Channel (Half Bridge)
FET Feature: Logic Level Gate
Family Name: Si4830CDY
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 8-SO
Maximum Power Dissipation: 2.9W
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 8A
Gate-Source Threshold Voltage: 3V @ 1mA
Max Gate Charge: 25nC @ 10V
Max Input Capacitance: 950pF @ 15V
Maximum Rds On at Id,Vgs: 20 mOhm @ 8A, 10V
Alternative Parts (Cross-Reference): DMG4932LSD-13; IRF7904PBF; AO4916;
Introduction Date: September 03, 2008
ECCN: EAR99
Estimated EOL Date: Obsolete
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 50 pct.
Supply and Demand Status: Balance
MOSFET 2N-CH 30V 8A 8SOIC
MOSFET 30V 8.0A 2.9W 20mohm @ 10V
| ERSAELECTRONICS PTE. LTD. | DigiKey | ODG (Origin Data Global) | Win Source Electronics | Shenzhen Shengyu Electronics Technology Limited | Utmel Electronic Limited | |
|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 289-SI4830CDY-T1-E3 | SI4830CDY-T1-E3TR-ND | SI4830CDY-T1-E3 | 1096014-SI4830CDY-T1-E3 | SI4830CDY-T1-E3 | 880-SI4830CDY-T1-E3 |
| Product Name | 30V 8A MOSFET Transistor | FET, MOSFET Arrays | FET, MOSFET Arrays | TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI4830CDY-T1-E3 | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET 30V 8.0A 2.9W 20mohm @ 10V |
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | ||
| Package Type | Tape & Reel (TR) | "8-SOIC (0.154"", 3.90mm Width)" | 8-SOIC (0.154", 3.90mm Width) | SOT3; 8-SO | ||
| Packing Method | Tape & Reel (TR) | Tape Reel; Reel - TR | Tape Reel; Tape & Reel (TR),Cut Tape (CT),Digi-ReelR | Tape Reel; Tape & Reel (TR) | ||
| Polarity | N-Channel; 2 N-Channel (Half Bridge) | N-Channel | ||||
| Transistor Technology / Material | MOSFET (Metal Oxide) | SILICON |
