Vishay Intertechnology, Inc. TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI4830CDY-T1-E3 SI4830CDY-T1-E3

Manufacturer: Vishay
Win Source Part Number: 1096014-SI4830CDY-T1-E3
Packaging: Reel - TR
Mounting: SMD (SMT)
FET Type: 2 N-Channel (Half Bridge)
FET Feature: Logic Level Gate
Family Name: Si4830CDY
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 8-SO
Maximum Power Dissipation: 2.9W
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 8A
Gate-Source Threshold Voltage: 3V @ 1mA
Max Gate Charge: 25nC @ 10V
Max Input Capacitance: 950pF @ 15V
Maximum Rds On at Id,Vgs: 20 mOhm @ 8A, 10V
Alternative Parts (Cross-Reference): DMG4932LSD-13; IRF7904PBF; AO4916;
Introduction Date: September 03, 2008
ECCN: EAR99
Estimated EOL Date: Obsolete
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 50 pct.
Supply and Demand Status: Balance

MOSFET 2N-CH 30V 8A 8-SOIC

MOSFET 2N-CH 30V 8A 8SOIC Product overview: SI4830CDY-T1-E3 from Vishay / Siliconix is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30V, 8A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 8A, MOSFET Transistor, FET, MOSFET Arrays. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 289-SI4830CDY-T1-E3 can be used for catalog matching and distributor lookup.

Mosfet Array 2 N-Channel (Half Bridge) 30V 8A 2.9W Surface Mount 8-SOIC