Vishay Intertechnology, Inc. TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI4830CDY-T1-E3 SI4830CDY-T1-E3

Description
Manufacturer: Vishay Win Source Part Number: 1096014-SI4830CDY-T1 -E3 Packaging: Reel - TR Mounting: SMD (SMT) FET Type: 2 N-Channel (Half Bridge) FET Feature: Logic Level Gate Family Name: Si4830CDY Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 8-SO Maximum Power Dissipation: 2.9W Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 8A Gate-Source Threshold Voltage: 3V @ 1mA Max Gate Charge: 25nC @ 10V Max Input Capacitance: 950pF @ 15V Maximum Rds On at Id,Vgs: 20 mOhm @ 8A, 10V Alternative Parts (Cross-Reference): DMG4932LSD-13; IRF7904PBF; AO4916; Introduction Date: September 03, 2008 ECCN: EAR99 Estimated EOL Date: Obsolete Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 50 pct. Supply and Demand Status: Balance
  • TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI4830CDY-T1-E3 - 1096014-SI4830CDY-T1-E3 - Win Source Electronics
    Win Source Electronics
  • FET, MOSFET Arrays - SI4830CDY-T1-E3TR-ND - DigiKey
    DigiKey
  • FET, MOSFET Arrays - SI4830CDY-T1-E3 - ODG (Origin Data Global)
    ODG (Origin Data Global)
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - SI4830CDY-T1-E3 - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
  • MOSFET 30V 8.0A 2.9W 20mohm @ 10V - 880-SI4830CDY-T1-E3 - Utmel Electronic Limited
    Utmel Electronic Limited
Request a Quote Datasheet
Description
Manufacturer: Vishay Win Source Part Number: 1096014-SI4830CDY-T1 -E3 Packaging: Reel - TR Mounting: SMD (SMT) FET Type: 2 N-Channel (Half Bridge) FET Feature: Logic Level Gate Family Name: Si4830CDY Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 8-SO Maximum Power Dissipation: 2.9W Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 8A Gate-Source Threshold Voltage: 3V @ 1mA Max Gate Charge: 25nC @ 10V Max Input Capacitance: 950pF @ 15V Maximum Rds On at Id,Vgs: 20 mOhm @ 8A, 10V Alternative Parts (Cross-Reference): DMG4932LSD-13; IRF7904PBF; AO4916; Introduction Date: September 03, 2008 ECCN: EAR99 Estimated EOL Date: Obsolete Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 50 pct. Supply and Demand Status: Balance
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI4830CDY-T1-E3 - 1096014-SI4830CDY-T1-E3 - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI4830CDY-T1-E3
1096014-SI4830CDY-T1-E3
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI4830CDY-T1-E3 1096014-SI4830CDY-T1-E3
Manufacturer: Vishay Win Source Part Number: 1096014-SI4830CDY-T1 -E3 Packaging: Reel - TR Mounting: SMD (SMT) FET Type: 2 N-Channel (Half Bridge) FET Feature: Logic Level Gate Family Name: Si4830CDY Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 8-SO Maximum Power Dissipation: 2.9W Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 8A Gate-Source Threshold Voltage: 3V @ 1mA Max Gate Charge: 25nC @ 10V Max Input Capacitance: 950pF @ 15V Maximum Rds On at Id,Vgs: 20 mOhm @ 8A, 10V Alternative Parts (Cross-Reference): DMG4932LSD-13; IRF7904PBF; AO4916; Introduction Date: September 03, 2008 ECCN: EAR99 Estimated EOL Date: Obsolete Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 50 pct. Supply and Demand Status: Balance

Manufacturer: Vishay
Win Source Part Number: 1096014-SI4830CDY-T1-E3
Packaging: Reel - TR
Mounting: SMD (SMT)
FET Type: 2 N-Channel (Half Bridge)
FET Feature: Logic Level Gate
Family Name: Si4830CDY
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 8-SO
Maximum Power Dissipation: 2.9W
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 8A
Gate-Source Threshold Voltage: 3V @ 1mA
Max Gate Charge: 25nC @ 10V
Max Input Capacitance: 950pF @ 15V
Maximum Rds On at Id,Vgs: 20 mOhm @ 8A, 10V
Alternative Parts (Cross-Reference): DMG4932LSD-13; IRF7904PBF; AO4916;
Introduction Date: September 03, 2008
ECCN: EAR99
Estimated EOL Date: Obsolete
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 50 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
FET, MOSFET Arrays - SI4830CDY-T1-E3TR-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
FET, MOSFET Arrays
SI4830CDY-T1-E3TR-ND
FET, MOSFET Arrays SI4830CDY-T1-E3TR-ND
Mosfet Array 2 N-Channel (Half Bridge) 30V 8A 2.9W Surface Mount 8-SOIC

Mosfet Array 2 N-Channel (Half Bridge) 30V 8A 2.9W Surface Mount 8-SOIC

Buy Now Datasheet
FET, MOSFET Arrays - SI4830CDY-T1-E3 - ODG (Origin Data Global)
ODG (Origin Data Global)
Shenzhen, China
FET, MOSFET Arrays
SI4830CDY-T1-E3
FET, MOSFET Arrays SI4830CDY-T1-E3
MOSFET 2N-CH 30V 8A 8-SOIC

MOSFET 2N-CH 30V 8A 8-SOIC

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - SI4830CDY-T1-E3 - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
SI4830CDY-T1-E3
Discrete Semiconductor Products - Transistors - FETs, MOSFETs SI4830CDY-T1-E3
MOSFET 2N-CH 30V 8A 8SOIC

MOSFET 2N-CH 30V 8A 8SOIC

Supplier's Site
MOSFET 30V 8.0A 2.9W 20mohm @ 10V - 880-SI4830CDY-T1-E3 - Utmel Electronic Limited
Utmel Electronic Limited
Hong Kong, China
MOSFET 30V 8.0A 2.9W 20mohm @ 10V
880-SI4830CDY-T1-E3
MOSFET 30V 8.0A 2.9W 20mohm @ 10V 880-SI4830CDY-T1-E3
MOSFET 30V 8.0A 2.9W 20mohm @ 10V

MOSFET 30V 8.0A 2.9W 20mohm @ 10V

Supplier's Site

Technical Specifications

  Win Source Electronics DigiKey ODG (Origin Data Global) Shenzhen Shengyu Electronics Technology Limited Utmel Electronic Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number 1096014-SI4830CDY-T1-E3 SI4830CDY-T1-E3TR-ND SI4830CDY-T1-E3 SI4830CDY-T1-E3 880-SI4830CDY-T1-E3
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI4830CDY-T1-E3 FET, MOSFET Arrays FET, MOSFET Arrays Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET 30V 8.0A 2.9W 20mohm @ 10V
Polarity N-Channel N-Channel; 2 N-Channel (Half Bridge)
V(BR)DSS 30 volts 30 volts 30 volts
PD 2900 milliwatts 2900 milliwatts
TJ -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F)
Package Type SOT3; 8-SO "8-SOIC (0.154"", 3.90mm Width)" 8-SOIC (0.154", 3.90mm Width)
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