Vishay Intertechnology, Inc. 20V 2.0A 3.1W MOSFET Transistor SI4829DY-T1-E3

MOSFETs 20V 2.0A 3.1W 215mohm @ 4.5V Product overview: SI4829DY-T1-E3 from Vishay / Siliconix is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 20V, 2.0A, 3.1W. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 20V, 2.0A, 3.1W, MOSFET Transistor, FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 2088-SI4829DY-T1-E3 can be used for catalog matching and distributor lookup.

Manufacturer: Vishay
Win Source Part Number: 1096012-SI4829DY-T1-E3
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
FET Feature: Schottky Diode (Isolated)
Polarity: P-Channel
Power Dissipation (Max): 2W (Ta), 3.1W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 8-SO
Dimension: 8-SOIC (0.154", 3.90mm Width)
Drain-Source Breakdown Voltage: 20V
Continuous Drain Current at 25°C: 2A (Tc)
Gate-Source Threshold Voltage: 1.5V @ 250μA
Max Gate Charge: 8nC @ 10V
Max Input Capacitance: 210pF @ 10V
Maximum Gate-Source Voltage: ±12V
Maximum Rds On at Id,Vgs: 215 mOhm @ 2.5A, 4.5V
Popularity: Medium
Fake Threat In the Open Market: 29 pct.
Supply and Demand Status: Limited
Application Field: Used in Industrial, Power Management