P-Ch MOSFET SO-8 30V 13mohm @ 10V- Lead(
P-Ch MOSFET SO-8 30V 13mohm @ 10V- Lead(
P-Ch MOSFET SO-8 30V 13mohm @ 10V- Lead(
P-CH MOSFET, 30V, 10.9A, 12.5mR, 8-SOIC, SM Product overview: SI4825DDY-T1-GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30V, 10.9A, SOIC. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 10.9A, SOIC, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SI4825DDY-T1-GE3
Manufacturer: Vishay
Win Source Part Number: 028530-SI4825DDY-T1-
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 2.7W (Ta), 5W (Tc)
Family Name: Si4825DDY
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 8-SO
Dimension: 8-SOIC (0.154", 3.90mm Width)
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 14.9A (Tc)
Gate-Source Threshold Voltage: 2.5V @ 250μA
Max Gate Charge: 86nC @ 10V
Max Input Capacitance: 2550pF @ 15V
Maximum Gate-Source Voltage: ±25V
Maximum Rds On at Id,Vgs: 12.5 mOhm @ 10A, 10V
Alternative Parts (Cross-Reference): RRH090P03; TPC8111(TE85L); RRH090P03TB; TPC8111(T2LIBM2,Q) ;
Introduction Date: October 19, 2008
ECCN: EAR99
Estimated EOL Date: 2027
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 40 pct.
Supply and Demand Status: Limited
P-Channel 30V 14.9A (Tc) 2.7W (Ta), 5W (Tc) Surface Mount 8-SOIC
P-Channel 30V 14.9A (Tc) 2.7W (Ta), 5W (Tc) Surface Mount 8-SOIC
P-Channel 30V 14.9A (Tc) 2.7W (Ta), 5W (Tc) Surface Mount 8-SOIC
MOSFET,P CHANNEL,DIODE,30V,14
MOSFET P-CH 30V 14.9A 8SO
MOSFET,P CHANNEL,DIODE,30V,14
30V 14.9A 12.5mΩ@10V,10A 2.5V@250uA P Channel SOIC-8 MOSFETs ROHS
MOSFET P-CH 30V 14.9A 8SO
| RS Components, Ltd. | ERSAELECTRONICS PTE. LTD. | Win Source Electronics | DigiKey | VAST STOCK CO., LIMITED | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | Radwell International | LCSC Electronics Technology (HK) Limited | ODG (Origin Data Global) | |
|---|---|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 1807295 | 278-SI4825DDY-T1-GE3 | 028530-SI4825DDY-T1-GE3 | SI4825DDY-T1-GE3CT-ND | SI4825DDY-T1-GE3 | 23T8516 | SI4825DDY-T1-GE3 | 39130415 | SI4825DDY-T1-GE3 | SI4825DDY-T1-GE3 |
| Product Name | MOSFETs | 30V 10.9A SOIC MOSFET Transistor | TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI4825DDY-T1-GE3 | Single FETs, MOSFETs | MOSFET | Mosfet,p Channel,diode,30V,14.9A,8-Soic; Channel Type Vishay | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Transistor | Triode/MOS Tube/Transistor >> MOSFETs | Single FETs, MOSFETs |
| Package Type | SO-8; SO-8 | SOT3; 8-SO | "8-SOIC (0.154"", 3.90mm Width)" | TO-3 | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | ||||
| Polarity | P-Channel | P-Channel; P-Channel | P-Channel | P-Channel | P-Channel | P-Channel; P-Channel | ||||
| PD | 2700 milliwatts | 2700 to 5000 milliwatts | 2700 milliwatts | 2700 milliwatts | ||||||
| TJ | -55 C (-67 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | ||||||
| V(BR)DSS | 30 volts | 30 volts | 30 volts |
