Vishay Intertechnology, Inc. TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI4822DY-T1-E3 SI4822DY-T1-E3

Description
Manufacturer: Vishay Storage Condition: Dry storage cabinet & Humidity protection package Win Source Part Number: 1001816-SI4822DY-T1- E3 Length: 5 mm Mounting: SMD (SMT) Drain to Source Voltage (Vdss): 30 V Power Dissipation: 2.5 W Height: 1.55 mm Weight: 186.993455 mg Number of Channels: 1 Width: 4 mm Rise Time: 20 ns Fall Time: 45 ns Categories: Transistors - FETs, MOSFETs - RF Case / Package: SO Popularity: Low Fake Threat In the Open Market: 73 pct. Supply and Demand Status: Shortage Maximum Operating Temperature: 150 °C RoHS: Compliant Min Operating Temperature: -55 °C Element Configuration: Single Max Power Dissipation: 2.5 W Turn-On Delay Time: 20 ns Continuous Drain Current (ID): 12 A Drain to Source Breakdown Voltage: 30 V Turn-Off Delay Time: 75 ns Drain to Source Resistance: 10 mΩ Gate to Source Voltage (Vgs): 20 V
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Description
Manufacturer: Vishay Storage Condition: Dry storage cabinet & Humidity protection package Win Source Part Number: 1001816-SI4822DY-T1- E3 Length: 5 mm Mounting: SMD (SMT) Drain to Source Voltage (Vdss): 30 V Power Dissipation: 2.5 W Height: 1.55 mm Weight: 186.993455 mg Number of Channels: 1 Width: 4 mm Rise Time: 20 ns Fall Time: 45 ns Categories: Transistors - FETs, MOSFETs - RF Case / Package: SO Popularity: Low Fake Threat In the Open Market: 73 pct. Supply and Demand Status: Shortage Maximum Operating Temperature: 150 °C RoHS: Compliant Min Operating Temperature: -55 °C Element Configuration: Single Max Power Dissipation: 2.5 W Turn-On Delay Time: 20 ns Continuous Drain Current (ID): 12 A Drain to Source Breakdown Voltage: 30 V Turn-Off Delay Time: 75 ns Drain to Source Resistance: 10 mΩ Gate to Source Voltage (Vgs): 20 V
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TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI4822DY-T1-E3 - 1001816-SI4822DY-T1-E3 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI4822DY-T1-E3
1001816-SI4822DY-T1-E3
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI4822DY-T1-E3 1001816-SI4822DY-T1-E3
Manufacturer: Vishay Storage Condition: Dry storage cabinet & Humidity protection package Win Source Part Number: 1001816-SI4822DY-T1- E3 Length: 5 mm Mounting: SMD (SMT) Drain to Source Voltage (Vdss): 30 V Power Dissipation: 2.5 W Height: 1.55 mm Weight: 186.993455 mg Number of Channels: 1 Width: 4 mm Rise Time: 20 ns Fall Time: 45 ns Categories: Transistors - FETs, MOSFETs - RF Case / Package: SO Popularity: Low Fake Threat In the Open Market: 73 pct. Supply and Demand Status: Shortage Maximum Operating Temperature: 150 °C RoHS: Compliant Min Operating Temperature: -55 °C Element Configuration: Single Max Power Dissipation: 2.5 W Turn-On Delay Time: 20 ns Continuous Drain Current (ID): 12 A Drain to Source Breakdown Voltage: 30 V Turn-Off Delay Time: 75 ns Drain to Source Resistance: 10 mΩ Gate to Source Voltage (Vgs): 20 V

Manufacturer: Vishay
Storage Condition: Dry storage cabinet & Humidity protection package
Win Source Part Number: 1001816-SI4822DY-T1-E3
Length: 5 mm
Mounting: SMD (SMT)
Drain to Source Voltage (Vdss): 30 V
Power Dissipation: 2.5 W
Height: 1.55 mm
Weight: 186.993455 mg
Number of Channels: 1
Width: 4 mm
Rise Time: 20 ns
Fall Time: 45 ns
Categories: Transistors - FETs, MOSFETs - RF
Case / Package: SO
Popularity: Low
Fake Threat In the Open Market: 73 pct.
Supply and Demand Status: Shortage
Maximum Operating Temperature: 150 °C
RoHS: Compliant
Min Operating Temperature: -55 °C
Element Configuration: Single
Max Power Dissipation: 2.5 W
Turn-On Delay Time: 20 ns
Continuous Drain Current (ID): 12 A
Drain to Source Breakdown Voltage: 30 V
Turn-Off Delay Time: 75 ns
Drain to Source Resistance: 10 mΩ
Gate to Source Voltage (Vgs): 20 V

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Technical Specifications

  Win Source Electronics
Product Category Metal-Oxide Semiconductor FET (MOSFET)
Product Number 1001816-SI4822DY-T1-E3
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI4822DY-T1-E3
V(BR)DSS 30 volts
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