Vishay Intertechnology, Inc. TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI4816DY-T1-E3 SI4816DY-T1-E3

Description
Manufacturer: Vishay Win Source Part Number: 117885-SI4816DY-T1-E 3 Packaging: Reel - TR Mounting: SMD (SMT) FET Type: 2 N-Channel (Half Bridge) FET Feature: Logic Level Gate Categories: Discrete Semiconductor Products Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 8-SO Maximum Power Dissipation: 1W, 1.25W Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 5.3A, 7.7A Gate-Source Threshold Voltage: 2V @ 250μA Max Gate Charge: 12nC @ 5V Maximum Rds On at Id,Vgs: 22 mOhm @ 6.3A, 10V Popularity: Medium Fake Threat In the Open Market: 39 pct. Supply and Demand Status: Balance
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Description
Manufacturer: Vishay Win Source Part Number: 117885-SI4816DY-T1-E 3 Packaging: Reel - TR Mounting: SMD (SMT) FET Type: 2 N-Channel (Half Bridge) FET Feature: Logic Level Gate Categories: Discrete Semiconductor Products Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 8-SO Maximum Power Dissipation: 1W, 1.25W Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 5.3A, 7.7A Gate-Source Threshold Voltage: 2V @ 250μA Max Gate Charge: 12nC @ 5V Maximum Rds On at Id,Vgs: 22 mOhm @ 6.3A, 10V Popularity: Medium Fake Threat In the Open Market: 39 pct. Supply and Demand Status: Balance
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Suppliers

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TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI4816DY-T1-E3 - 117885-SI4816DY-T1-E3 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI4816DY-T1-E3
117885-SI4816DY-T1-E3
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI4816DY-T1-E3 117885-SI4816DY-T1-E3
Manufacturer: Vishay Win Source Part Number: 117885-SI4816DY-T1-E 3 Packaging: Reel - TR Mounting: SMD (SMT) FET Type: 2 N-Channel (Half Bridge) FET Feature: Logic Level Gate Categories: Discrete Semiconductor Products Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 8-SO Maximum Power Dissipation: 1W, 1.25W Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 5.3A, 7.7A Gate-Source Threshold Voltage: 2V @ 250μA Max Gate Charge: 12nC @ 5V Maximum Rds On at Id,Vgs: 22 mOhm @ 6.3A, 10V Popularity: Medium Fake Threat In the Open Market: 39 pct. Supply and Demand Status: Balance

Manufacturer: Vishay
Win Source Part Number: 117885-SI4816DY-T1-E3
Packaging: Reel - TR
Mounting: SMD (SMT)
FET Type: 2 N-Channel (Half Bridge)
FET Feature: Logic Level Gate
Categories: Discrete Semiconductor Products
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 8-SO
Maximum Power Dissipation: 1W, 1.25W
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 5.3A, 7.7A
Gate-Source Threshold Voltage: 2V @ 250μA
Max Gate Charge: 12nC @ 5V
Maximum Rds On at Id,Vgs: 22 mOhm @ 6.3A, 10V
Popularity: Medium
Fake Threat In the Open Market: 39 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - SI4816DY-T1-E3 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
SI4816DY-T1-E3
Discrete Semiconductor Products - Transistors - FETs, MOSFETs SI4816DY-T1-E3
MOSFET 2N-CH 30V 5.3A/7.7A 8SOIC

MOSFET 2N-CH 30V 5.3A/7.7A 8SOIC

Supplier's Site

Technical Specifications

  Win Source Electronics Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number 117885-SI4816DY-T1-E3 SI4816DY-T1-E3
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI4816DY-T1-E3 Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel
V(BR)DSS 30 volts
PD 1000 to 1250 milliwatts
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