Mosfet Array 2 N-Channel (Half Bridge) 30V 5.8A, 8.2A 1W, 1.25W Surface Mount 8-SOIC
Mosfet Array 2 N-Channel (Half Bridge) 30V 5.8A, 8.2A 1W, 1.25W Surface Mount 8-SOIC
Mosfet Array 2 N-Channel (Half Bridge) 30V 5.8A, 8.2A 1W, 1.25W Surface Mount 8-SOIC
N-Channel JFET, 30V, 5.8A ID, 18.5mR Rds On, 2-Element, SOP-8 Product overview: SI4816BDY-T1-GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 30V, 5.8A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 5.8A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SI4816BDY-T1-GE3
Manufacturer: Vishay
Win Source Part Number: 064519-SI4816BDY-T1-
Packaging: Reel - TR
Mounting: SMD (SMT)
FET Type: 2 N-Channel (Half Bridge)
FET Feature: Logic Level Gate
Family Name: Si4816BDY
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 8-SO
Maximum Power Dissipation: 1W, 1.25W
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 5.8A, 8.2A
Gate-Source Threshold Voltage: 3V @ 250μA
Max Gate Charge: 10nC @ 5V
Maximum Rds On at Id,Vgs: 18.5 mOhm @ 6.8A, 10V
Alternative Parts (Cross-Reference): AO4940; IRF7904PBF; AO4916;
Introduction Date: October 28, 2004
ECCN: EAR99
Estimated EOL Date: 2024
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 33 pct.
Supply and Demand Status: Limited
MOSFET 2N-CH 30V 5.8A 8-SOIC
MOSFET 2N-CH 30V 5.8A/8.2A 8SOIC
DUAL N CHANNEL MOSFET, 30V, SOIC, FULL REEL; Transistor Polarity:N Channel + Schottky; Drain Source Voltage Vds:30V; Continuous Drain Current Id:5.8A; On Resistance Rds(on):0.0155ohm; Transistor Mounting:Surface Mount RoHS Compliant: Yes
MOSFET, NN CH, 30V, 8SOIC; Transistor Polarity:Dual N Channel; Continuous Drain Current Id:5.8A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.0155ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power DissipationRoHS Compliant: Yes
| DigiKey | ERSAELECTRONICS PTE. LTD. | Win Source Electronics | ODG (Origin Data Global) | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | Newark, An Avnet Company | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | SI4816BDY-T1-GE3CT-ND | 278-SI4816BDY-T1-GE3 | 064519-SI4816BDY-T1-GE3 | SI4816BDY-T1-GE3 | SI4816BDY-T1-GE3 | SI4816BDY-T1-GE3 | 15R5082 | 78Y6742 |
| Product Name | FET, MOSFET Arrays | N-Channel 30V 5.8A MOSFET Transistor | TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI4816BDY-T1-GE3 | FET, MOSFET Arrays | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET | Dual N Channel Mosfet, 30V, Soic, Full Reel; Transistor Polarity Vishay | Mosfet, Nn Ch, 30V, 8Soic; Transistor Polarity Vishay |
| Package Type | "8-SOIC (0.154"", 3.90mm Width)" | SOT3; 8-SO | 8-SOIC (0.154", 3.90mm Width) | TO-3 | TO-3 | |||
| Polarity | N-Channel | N-Channel | N-Channel; 2 N-Channel (Half Bridge) | N-Channel | ||||
| PD | 1250 milliwatts | 1000 to 1250 milliwatts | ||||||
| TJ | -55 C (-67 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | |||||
| V(BR)DSS | 30 volts | 30 volts |
