Mosfet Array 2 N-Channel (Dual) 30V 8A 3.1W Surface Mount 8-SOIC
Mosfet Array 2 N-Channel (Dual) 30V 8A 3.1W Surface Mount 8-SOIC
Mosfet Array 2 N-Channel (Dual) 30V 8A 3.1W Surface Mount 8-SOIC
MOSFET 2N-CH 30V 8A 8SOIC
N-CH MOSFET 30V 7.1A 22mR SOIC N Product overview: SI4804CDY-T1-GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30V, 7.1A, SOIC. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 7.1A, SOIC, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SI4804CDY-T1-GE3
Manufacturer: Vishay
Win Source Part Number: 028525-SI4804CDY-T1-
Packaging: Reel - TR
Mounting: SMD (SMT)
FET Type: 2 N-Channel (Dual)
FET Feature: Standard
Family Name: Si4804CDY
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 8-SO
Maximum Power Dissipation: 3.1W
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 8A
Gate-Source Threshold Voltage: 2.4V @ 250μA
Max Gate Charge: 23nC @ 10V
Max Input Capacitance: 865pF @ 15V
Maximum Rds On at Id,Vgs: 22 mOhm @ 7.5A, 10V
Alternative Parts (Cross-Reference): ZXMN3F31DN8; DMN3024LSD-13; DMN3024LSD;
Introduction Date: December 06, 2000
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: 2019
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 28 pct.
Supply and Demand Status: Balance
MOSFET 2N-CH 30V 8A 8SOIC
MOSFET, DUAL N CHANNEL, 30V, 8A, SOIC-8; Transistor Polarity:N Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:8A; On Resistance Rds(on):0.018ohm; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V RoHS Compliant: Yes
MOSFET, DUAL N CHANNEL, 30V, 8A, SOIC-8, FULL REEL; Transistor Polarity:N Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:8A; On Resistance Rds(on):0.018ohm; Transistor Mounting:Surface Mount; No. of Pins:8Pins RoHS Compliant: Yes
| DigiKey | ODG (Origin Data Global) | ERSAELECTRONICS PTE. LTD. | Win Source Electronics | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | SI4804CDY-T1-GE3TR-ND | SI4804CDY-T1-GE3 | 278-SI4804CDY-T1-GE3 | 028525-SI4804CDY-T1-GE3 | SI4804CDY-T1-GE3 | 09X6437 |
| Product Name | FET, MOSFET Arrays | FET, MOSFET Arrays | 30V 7.1A SOIC MOSFET Transistor | TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI4804CDY-T1-GE3 | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Mosfet, Dual N Channel, 30V, 8A, Soic-8; Transistor Polarity Vishay |
| Package Type | "8-SOIC (0.154"", 3.90mm Width)" | 8-SOIC (0.154", 3.90mm Width) | SOT3; 8-SO | TO-3 | ||
| Polarity | N-Channel; 2 N-Channel (Dual) | N-Channel | N-Channel | N-Channel | ||
| Transistor Technology / Material | MOSFET (Metal Oxide) | |||||
| V(BR)DSS | 30 volts | 30 volts | ||||
| IDSS | 8000 milliamps | 8000 milliamps |
