MOSFET 2N-CH 30V 5.7A 8SOIC Product overview: SI4804BDY-T1-E3 from Vishay / Siliconix is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30V, 5.7A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 5.7A, MOSFET Transistor, FET, MOSFET Arrays. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 289-SI4804BDY-T1-E3 can be used for catalog matching and distributor lookup.
Mosfet Array 2 N-Channel (Dual) 30V 5.7A 1.1W Surface Mount 8-SOIC
MOSFET 2N-CH 30V 5.7A 8-SOIC
Manufacturer: Vishay
Win Source Part Number: 101325-SI4804BDY-T1-
Packaging: Reel - TR
Mounting: SMD (SMT)
FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Categories: Discrete Semiconductor Products
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 8-SO
Maximum Power Dissipation: 1.1W
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 5.7A
Gate-Source Threshold Voltage: 3V @ 250μA
Max Gate Charge: 11nC @ 4.5V
Maximum Rds On at Id,Vgs: 22 mOhm @ 7.5A, 10V
Popularity: Medium
Fake Threat In the Open Market: 62 pct.
Supply and Demand Status: Sufficient
Application Field: Used in Industrial, Power Management
MOSFET 2N-CH 30V 5.7A 8SOIC
| ERSAELECTRONICS PTE. LTD. | DigiKey | ODG (Origin Data Global) | Win Source Electronics | Utmel Electronic Limited | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | 289-SI4804BDY-T1-E3 | SI4804BDY-T1-E3TR-ND | SI4804BDY-T1-E3 | 101325-SI4804BDY-T1-E3 | 880-SI4804BDY-T1-E3 | SI4804BDY-T1-E3 |
| Product Name | 30V 5.7A MOSFET Transistor | FET, MOSFET Arrays | FET, MOSFET Arrays | TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI4804BDY-T1-E3 | MOSFET 30V 7.5A 2W | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | ||
| Package Type | Tape & Reel (TR) | "8-SOIC (0.154"", 3.90mm Width)" | 8-SOIC (0.154", 3.90mm Width) | SOT3; 8-SO | ||
| Packing Method | Tape & Reel (TR) | Tape Reel; Reel - TR | Tape Reel; Tape & Reel (TR) | Tape Reel; Tape & Reel (TR),Cut Tape (CT),Digi-ReelR | ||
| Polarity | N-Channel; 2 N-Channel (Dual) | N-Channel | ||||
| Transistor Technology / Material | MOSFET (Metal Oxide) | SILICON |
