Vishay Precision Group Single FETs, MOSFETs SI4800BDY-T1-GE3

Description
N-Channel 30V 6.5A (Ta) 1.3W (Ta) Surface Mount 8-SOIC
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Description
N-Channel 30V 6.5A (Ta) 1.3W (Ta) Surface Mount 8-SOIC
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - SI4800BDY-T1-GE3TR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SI4800BDY-T1-GE3TR-ND
Single FETs, MOSFETs SI4800BDY-T1-GE3TR-ND
N-Channel 30V 6.5A (Ta) 1.3W (Ta) Surface Mount 8-SOIC

N-Channel 30V 6.5A (Ta) 1.3W (Ta) Surface Mount 8-SOIC

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Single FETs, MOSFETs - SI4800BDY-T1-GE3CT-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SI4800BDY-T1-GE3CT-ND
Single FETs, MOSFETs SI4800BDY-T1-GE3CT-ND
N-Channel 30V 6.5A (Ta) 1.3W (Ta) Surface Mount 8-SOIC

N-Channel 30V 6.5A (Ta) 1.3W (Ta) Surface Mount 8-SOIC

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Single FETs, MOSFETs - SI4800BDY-T1-GE3DKR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SI4800BDY-T1-GE3DKR-ND
Single FETs, MOSFETs SI4800BDY-T1-GE3DKR-ND
N-Channel 30V 6.5A (Ta) 1.3W (Ta) Surface Mount 8-SOIC

N-Channel 30V 6.5A (Ta) 1.3W (Ta) Surface Mount 8-SOIC

Buy Now Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI4800BDY-T1-GE3 - 028524-SI4800BDY-T1-GE3 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI4800BDY-T1-GE3
028524-SI4800BDY-T1-GE3
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI4800BDY-T1-GE3 028524-SI4800BDY-T1-GE3
Manufacturer: Vishay Win Source Part Number: 028524-SI4800BDY-T1- GE3 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 1.3W (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 8-SO Dimension: 8-SOIC (0.154", 3.90mm Width) Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 6.5A (Ta) Gate-Source Threshold Voltage: 1.8V @ 250μA Max Gate Charge: 13nC @ 5V Maximum Gate-Source Voltage: ±25V Maximum Rds On at Id,Vgs: 18.5 mOhm @ 9A, 10V Popularity: Medium Fake Threat In the Open Market: 43 pct. Supply and Demand Status: Sufficient

Manufacturer: Vishay
Win Source Part Number: 028524-SI4800BDY-T1-GE3
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 1.3W (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 8-SO
Dimension: 8-SOIC (0.154", 3.90mm Width)
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 6.5A (Ta)
Gate-Source Threshold Voltage: 1.8V @ 250μA
Max Gate Charge: 13nC @ 5V
Maximum Gate-Source Voltage: ±25V
Maximum Rds On at Id,Vgs: 18.5 mOhm @ 9A, 10V
Popularity: Medium
Fake Threat In the Open Market: 43 pct.
Supply and Demand Status: Sufficient

Buy Now Datasheet
Single FETs, MOSFETs - SI4800BDY-T1-GE3 - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
SI4800BDY-T1-GE3
Single FETs, MOSFETs SI4800BDY-T1-GE3
MOSFET N-CH 30V 6.5A 8SO

MOSFET N-CH 30V 6.5A 8SO

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - SI4800BDY-T1-GE3 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
SI4800BDY-T1-GE3
Discrete Semiconductor Products - Transistors - FETs, MOSFETs SI4800BDY-T1-GE3
MOSFET N-CH 30V 6.5A 8SO

MOSFET N-CH 30V 6.5A 8SO

Supplier's Site
MOSFET 30V 9.0A 2.5W 18.5mohm @ 10V

MOSFET 30V 9.0A 2.5W 18.5mohm @ 10V

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Technical Specifications

  DigiKey Win Source Electronics ODG (Origin Data Global) Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number SI4800BDY-T1-GE3TR-ND 028524-SI4800BDY-T1-GE3 SI4800BDY-T1-GE3 SI4800BDY-T1-GE3 SI4800BDY-T1-GE3
Product Name Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI4800BDY-T1-GE3 Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET
Polarity N-Channel N-Channel; N-Channel N-Channel; N-Channel
Package Type "8-SOIC (0.154"", 3.90mm Width)" SOT3; 8-SO 8-SOIC (0.154", 3.90mm Width) Surface Mount
V(BR)DSS 30 volts 30 volts
PD 1300 milliwatts 1300 milliwatts
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