Manufacturer: Vishay
Win Source Part Number: 028524-SI4800BDY-T1-
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 1.3W (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 8-SO
Dimension: 8-SOIC (0.154", 3.90mm Width)
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 6.5A (Ta)
Gate-Source Threshold Voltage: 1.8V @ 250μA
Max Gate Charge: 13nC @ 5V
Maximum Gate-Source Voltage: ±25V
Maximum Rds On at Id,Vgs: 18.5 mOhm @ 9A, 10V
Popularity: Medium
Fake Threat In the Open Market: 43 pct.
Supply and Demand Status: Sufficient
MOSFET N-CH 30V 6.5A 8SO
N-Channel 30V 6.5A (Ta) 1.3W (Ta) Surface Mount 8-SOIC
N-Channel 30V 6.5A (Ta) 1.3W (Ta) Surface Mount 8-SOIC
N-Channel 30V 6.5A (Ta) 1.3W (Ta) Surface Mount 8-SOIC
MOSFET 30V 9.0A 2.5W 18.5mohm @ 10V
MOSFET N-CH 30V 6.5A 8SO
| Win Source Electronics | ODG (Origin Data Global) | DigiKey | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | 028524-SI4800BDY-T1-GE3 | SI4800BDY-T1-GE3 | SI4800BDY-T1-GE3TR-ND | SI4800BDY-T1-GE3 | SI4800BDY-T1-GE3 |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI4800BDY-T1-GE3 | Single FETs, MOSFETs | Single FETs, MOSFETs | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel; N-Channel | N-Channel; N-Channel | N-Channel | ||
| V(BR)DSS | 30 volts | 30 volts | |||
| PD | 1300 milliwatts | 1300 milliwatts | |||
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) |
