Vishay Precision Group Single FETs, MOSFETs SI4800BDY-T1-E3

Description
N-Channel 30V 6.5A (Ta) 1.3W (Ta) Surface Mount 8-SOIC
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Description
N-Channel 30V 6.5A (Ta) 1.3W (Ta) Surface Mount 8-SOIC
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - SI4800BDY-T1-E3CT-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SI4800BDY-T1-E3CT-ND
Single FETs, MOSFETs SI4800BDY-T1-E3CT-ND
N-Channel 30V 6.5A (Ta) 1.3W (Ta) Surface Mount 8-SOIC

N-Channel 30V 6.5A (Ta) 1.3W (Ta) Surface Mount 8-SOIC

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Single FETs, MOSFETs - SI4800BDY-T1-E3DKR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SI4800BDY-T1-E3DKR-ND
Single FETs, MOSFETs SI4800BDY-T1-E3DKR-ND
N-Channel 30V 6.5A (Ta) 1.3W (Ta) Surface Mount 8-SOIC

N-Channel 30V 6.5A (Ta) 1.3W (Ta) Surface Mount 8-SOIC

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Single FETs, MOSFETs - SI4800BDY-T1-E3TR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SI4800BDY-T1-E3TR-ND
Single FETs, MOSFETs SI4800BDY-T1-E3TR-ND
N-Channel 30V 6.5A (Ta) 1.3W (Ta) Surface Mount 8-SOIC

N-Channel 30V 6.5A (Ta) 1.3W (Ta) Surface Mount 8-SOIC

Buy Now Datasheet
Single FETs, MOSFETs - SI4800BDY-T1-E3 - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
SI4800BDY-T1-E3
Single FETs, MOSFETs SI4800BDY-T1-E3
MOSFET N-CH 30V 6.5A 8SO

MOSFET N-CH 30V 6.5A 8SO

Supplier's Site Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI4800BDY-T1-E3 - 028523-SI4800BDY-T1-E3 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI4800BDY-T1-E3
028523-SI4800BDY-T1-E3
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI4800BDY-T1-E3 028523-SI4800BDY-T1-E3
Manufacturer: Vishay Win Source Part Number: 028523-SI4800BDY-T1- E3 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 1.3W (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 8-SO Dimension: 8-SOIC (0.154", 3.90mm Width) Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 6.5A (Ta) Gate-Source Threshold Voltage: 1.8V @ 250μA Max Gate Charge: 13nC @ 5V Maximum Gate-Source Voltage: ±25V Maximum Rds On at Id,Vgs: 18.5 mOhm @ 9A, 10V Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 30 pct. Supply and Demand Status: Sufficient

Manufacturer: Vishay
Win Source Part Number: 028523-SI4800BDY-T1-E3
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 1.3W (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 8-SO
Dimension: 8-SOIC (0.154", 3.90mm Width)
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 6.5A (Ta)
Gate-Source Threshold Voltage: 1.8V @ 250μA
Max Gate Charge: 13nC @ 5V
Maximum Gate-Source Voltage: ±25V
Maximum Rds On at Id,Vgs: 18.5 mOhm @ 9A, 10V
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 30 pct.
Supply and Demand Status: Sufficient

Buy Now Datasheet
Sheung Wan, Hong Kong
MOSFET 30V 9A 2.5W

MOSFET 30V 9A 2.5W

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Discrete Semiconductor Products - Transistors - FETs, MOSFETs - SI4800BDY-T1-E3 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
SI4800BDY-T1-E3
Discrete Semiconductor Products - Transistors - FETs, MOSFETs SI4800BDY-T1-E3
MOSFET N-CH 30V 6.5A 8SO

MOSFET N-CH 30V 6.5A 8SO

Supplier's Site
N Channel Mosfet, 30V, 9A, Soic; Channel Type Vishay - 06J7845 - Newark, An Avnet Company
Chicago, IL, United States
N Channel Mosfet, 30V, 9A, Soic; Channel Type Vishay
06J7845
N Channel Mosfet, 30V, 9A, Soic; Channel Type Vishay 06J7845
N CHANNEL MOSFET, 30V, 9A, SOIC; Channel Type:N Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:9A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:1.8V RoHS Compliant: Yes

N CHANNEL MOSFET, 30V, 9A, SOIC; Channel Type:N Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:9A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:1.8V RoHS Compliant: Yes

Supplier's Site Datasheet

Technical Specifications

  DigiKey ODG (Origin Data Global) Win Source Electronics VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited Newark, An Avnet Company
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number SI4800BDY-T1-E3CT-ND SI4800BDY-T1-E3 028523-SI4800BDY-T1-E3 SI4800BDY-T1-E3 SI4800BDY-T1-E3 06J7845
Product Name Single FETs, MOSFETs Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI4800BDY-T1-E3 MOSFET Discrete Semiconductor Products - Transistors - FETs, MOSFETs N Channel Mosfet, 30V, 9A, Soic; Channel Type Vishay
Polarity N-Channel N-Channel; N-Channel N-Channel; N-Channel N-Channel
Package Type "8-SOIC (0.154"", 3.90mm Width)" 8-SOIC (0.154", 3.90mm Width) SOT3; 8-SO 8-SOIC (0.154, 3.90mm Width) TO-3
Transistor Technology / Material MOSFET (Metal Oxide)
V(BR)DSS 30 volts 30 volts
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