Vishay Intertechnology, Inc. 25V 8A MOSFET Transistor SI4778DY-T1-E3

MOSFET N-CH 25V 8A 8SO Product overview: SI4778DY-T1-E3 from Vishay / Siliconix is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 25V, 8A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 25V, 8A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SI4778DY-T1-E3 can be used for catalog matching and distributor lookup.

N-Channel 25V 8A (Tc) 2.4W (Ta), 5W (Tc) Surface Mount 8-SOIC

Manufacturer: Vishay
Win Source Part Number: 028522-SI4778DY-T1-E3
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 2.4W (Ta), 5W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 8-SO
Dimension: 8-SOIC (0.154", 3.90mm Width)
Drain-Source Breakdown Voltage: 25V
Continuous Drain Current at 25°C: 8A (Tc)
Gate-Source Threshold Voltage: 2.2V @ 250μA
Max Gate Charge: 18nC @ 10V
Max Input Capacitance: 680pF @ 13V
Maximum Gate-Source Voltage: ±16V
Maximum Rds On at Id,Vgs: 23 mOhm @ 7A, 10V
Popularity: Medium
Fake Threat In the Open Market: 53 pct.
Supply and Demand Status: Sufficient