Vishay Intertechnology, Inc. Discrete Semiconductor Products SI4712DY-T1-E3

Description
Manufacturer: Vishay-Siliconix Win Source Part Number: 189961-SI4712DY-T1-E 3 Category: Discrete Semiconductor Products Family: Transistors - FETs, MOSFETs - Single Series: SkyFET, TrenchFET Packaging: Reel(TR) Mounting Style: SMD/SMT Operating Temperature Range: -55°C ~ 150°C (TJ) Package: 8-SOIC (0.154", 3.90mm Width) Manufacturer Device Package: 8-SO FET Type: MOSFET N-Channel, Metal Oxide FET Feature: Standard Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 14.6A (Tc) Rds On (Max) @ Id, Vgs: 13 mOhm @ 15A, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) @ Vgs: 28nC @ 10V Input Capacitance (Ciss) @ Vds: 1084pF @ 15V Power - Max: 5W Popularity: Medium Fake Threat In the Open Market: 46 pct. Supply and Demand Status: Limited
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Description
Manufacturer: Vishay-Siliconix Win Source Part Number: 189961-SI4712DY-T1-E 3 Category: Discrete Semiconductor Products Family: Transistors - FETs, MOSFETs - Single Series: SkyFET, TrenchFET Packaging: Reel(TR) Mounting Style: SMD/SMT Operating Temperature Range: -55°C ~ 150°C (TJ) Package: 8-SOIC (0.154", 3.90mm Width) Manufacturer Device Package: 8-SO FET Type: MOSFET N-Channel, Metal Oxide FET Feature: Standard Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 14.6A (Tc) Rds On (Max) @ Id, Vgs: 13 mOhm @ 15A, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) @ Vgs: 28nC @ 10V Input Capacitance (Ciss) @ Vds: 1084pF @ 15V Power - Max: 5W Popularity: Medium Fake Threat In the Open Market: 46 pct. Supply and Demand Status: Limited
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Suppliers

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Discrete Semiconductor Products - 189961-SI4712DY-T1-E3 - Win Source Electronics
Laguna Hills, CA, United States
Discrete Semiconductor Products
189961-SI4712DY-T1-E3
Discrete Semiconductor Products 189961-SI4712DY-T1-E3
Manufacturer: Vishay-Siliconix Win Source Part Number: 189961-SI4712DY-T1-E 3 Category: Discrete Semiconductor Products Family: Transistors - FETs, MOSFETs - Single Series: SkyFET, TrenchFET Packaging: Reel(TR) Mounting Style: SMD/SMT Operating Temperature Range: -55°C ~ 150°C (TJ) Package: 8-SOIC (0.154", 3.90mm Width) Manufacturer Device Package: 8-SO FET Type: MOSFET N-Channel, Metal Oxide FET Feature: Standard Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 14.6A (Tc) Rds On (Max) @ Id, Vgs: 13 mOhm @ 15A, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) @ Vgs: 28nC @ 10V Input Capacitance (Ciss) @ Vds: 1084pF @ 15V Power - Max: 5W Popularity: Medium Fake Threat In the Open Market: 46 pct. Supply and Demand Status: Limited

Manufacturer: Vishay-Siliconix
Win Source Part Number: 189961-SI4712DY-T1-E3
Category: Discrete Semiconductor Products
Family: Transistors - FETs, MOSFETs - Single
Series: SkyFET, TrenchFET
Packaging: Reel(TR)
Mounting Style: SMD/SMT
Operating Temperature Range: -55°C ~ 150°C (TJ)
Package: 8-SOIC (0.154", 3.90mm Width)
Manufacturer Device Package: 8-SO
FET Type: MOSFET N-Channel, Metal Oxide
FET Feature: Standard
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 14.6A (Tc)
Rds On (Max) @ Id, Vgs: 13 mOhm @ 15A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Gate Charge (Qg) @ Vgs: 28nC @ 10V
Input Capacitance (Ciss) @ Vds: 1084pF @ 15V
Power - Max: 5W
Popularity: Medium
Fake Threat In the Open Market: 46 pct.
Supply and Demand Status: Limited

Buy Now Datasheet
Singapore
30V 14.6A MOSFET Transistor
278-SI4712DY-T1-E3
30V 14.6A MOSFET Transistor 278-SI4712DY-T1-E3
MOSFET N-CH 30V 14.6A 8SOIC Product overview: SI4712DY-T1-E3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30V, 14.6A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 14.6A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SI4712DY-T1-E3 can be used for catalog matching and distributor lookup.

MOSFET N-CH 30V 14.6A 8SOIC Product overview: SI4712DY-T1-E3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30V, 14.6A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 14.6A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SI4712DY-T1-E3 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet

Technical Specifications

  Win Source Electronics ERSAELECTRONICS PTE. LTD.
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET)
Product Number 189961-SI4712DY-T1-E3 278-SI4712DY-T1-E3
Product Name Discrete Semiconductor Products 30V 14.6A MOSFET Transistor
Polarity N-Channel
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