Vishay Intertechnology, Inc. Single FETs, MOSFETs SI4688DY-T1-E3

Description
N-Channel 30V 8.9A (Ta) 1.4W (Ta) Surface Mount 8-SOIC
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Description
N-Channel 30V 8.9A (Ta) 1.4W (Ta) Surface Mount 8-SOIC
Request a Quote Datasheet

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Single FETs, MOSFETs - SI4688DY-T1-E3-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SI4688DY-T1-E3-ND
Single FETs, MOSFETs SI4688DY-T1-E3-ND
N-Channel 30V 8.9A (Ta) 1.4W (Ta) Surface Mount 8-SOIC

N-Channel 30V 8.9A (Ta) 1.4W (Ta) Surface Mount 8-SOIC

Buy Now Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI4688DY-T1-E3 - 794260-SI4688DY-T1-E3 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI4688DY-T1-E3
794260-SI4688DY-T1-E3
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI4688DY-T1-E3 794260-SI4688DY-T1-E3
Manufacturer: Vishay Siliconix Win Source Part Number: 794260-SI4688DY-T1-E 3 Series: TrenchFET Packaging: Reel package Operating Temperature Range: -55°C ~ 150°C (TJ) Package: 8-SOIC (0.154", 3.90mm Width) Mounting: SMD Technology: MOSFET Current - Continuous Drain (Id) @ 25°C: 8.9A (Ta) Part Status: Obsolete(EOL) Family Name: Si4688DY Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Manufacturer Package: 8-SO Channel Type Type: N Drain Source Voltage: 30V Vgs(th) (Maximum) @ Id: 3V @ 250μA Gate Charge (Qg) (Maximum) @ Vgs: 38nC @ 10V Input Capacitance (Ciss) (Maximum) @ Vds: 1580pF @ 15V Vgs (Maximum): ±20V Power Dissipation (Maximum): 1.4W (Ta) Rds On (Maximum) @ Id, Vgs: 11 mOhm @ 12A, 10V Alternative Parts (Cross-Reference): NTMS4706NR2; NTMS4706NR2G; NVMS4816NR2G; NTMS4816NR2G; Introduction Date: September 25, 2009 ECCN: EAR99 Estimated EOL Date: Obsolete / End of life Popularity: Medium Fake Threat In the Open Market: 41 pct. Supply and Demand Status: Limited

Manufacturer: Vishay Siliconix
Win Source Part Number: 794260-SI4688DY-T1-E3
Series: TrenchFET
Packaging: Reel package
Operating Temperature Range: -55°C ~ 150°C (TJ)
Package: 8-SOIC (0.154", 3.90mm Width)
Mounting: SMD
Technology: MOSFET
Current - Continuous Drain (Id) @ 25°C: 8.9A (Ta)
Part Status: Obsolete(EOL)
Family Name: Si4688DY
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Manufacturer Package: 8-SO
Channel Type Type: N
Drain Source Voltage: 30V
Vgs(th) (Maximum) @ Id: 3V @ 250μA
Gate Charge (Qg) (Maximum) @ Vgs: 38nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds: 1580pF @ 15V
Vgs (Maximum): ±20V
Power Dissipation (Maximum): 1.4W (Ta)
Rds On (Maximum) @ Id, Vgs: 11 mOhm @ 12A, 10V
Alternative Parts (Cross-Reference): NTMS4706NR2; NTMS4706NR2G; NVMS4816NR2G; NTMS4816NR2G;
Introduction Date: September 25, 2009
ECCN: EAR99
Estimated EOL Date: Obsolete / End of life
Popularity: Medium
Fake Threat In the Open Market: 41 pct.
Supply and Demand Status: Limited

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - SI4688DY-T1-E3 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
SI4688DY-T1-E3
Discrete Semiconductor Products - Transistors - FETs, MOSFETs SI4688DY-T1-E3
MOSFET N-CH 30V 8.9A 8SO

MOSFET N-CH 30V 8.9A 8SO

Supplier's Site

Technical Specifications

  DigiKey Win Source Electronics Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number SI4688DY-T1-E3-ND 794260-SI4688DY-T1-E3 SI4688DY-T1-E3
Product Name Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI4688DY-T1-E3 Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel
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