N-CH MOSFET 30V 13.8A 9.5mR SO Surface Mount Product overview: SI4686DY-T1-E3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include SMD, 30V, 13.8A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, SMD, 30V, 13.8A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SI4686DY-T1-E3 can be used for catalog matching and distributor lookup.
MOSFET N-CH 30V 18.2A 8SO
N-Channel 30V 18.2A (Tc) 3W (Ta), 5.2W (Tc) Surface Mount 8-SOIC
N-Channel 30V 18.2A (Tc) 3W (Ta), 5.2W (Tc) Surface Mount 8-SOIC
N-Channel 30V 18.2A (Tc) 3W (Ta), 5.2W (Tc) Surface Mount 8-SOIC
Manufacturer: Vishay
Win Source Part Number: 028519-SI4686DY-T1-E
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 3W (Ta), 5.2W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 8-SO
Dimension: 8-SOIC (0.154", 3.90mm Width)
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 18.2A (Tc)
Gate-Source Threshold Voltage: 3V @ 250μA
Max Gate Charge: 26nC @ 10V
Max Input Capacitance: 1220pF @ 15V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 9.5 mOhm @ 13.8A, 10V
Popularity: Medium
Fake Threat In the Open Market: 29 pct.
Supply and Demand Status: Sufficient
N CHANNEL MOSFET, 30V, 18.2A, SOIC, FULL REEL; Channel Type:N Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:18.2A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:20V; Gate Source Threshold Voltage Max:3VRoHS Compliant: Yes
MOSFET, N CHANNEL, 30V, 18.2A, SOIC-8; Channel Type:N Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:18.2A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:1V RoHS Compliant: Yes
MOSFET N-CH 30V 18.2A 8SO
| ERSAELECTRONICS PTE. LTD. | ODG (Origin Data Global) | DigiKey | Win Source Electronics | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | 278-SI4686DY-T1-E3 | SI4686DY-T1-E3 | SI4686DY-T1-E3CT-ND | 028519-SI4686DY-T1-E3 | 75M5494 | SI4686DY-T1-E3 |
| Product Name | SMD 30V 13.8A MOSFET Transistor | Single FETs, MOSFETs | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI4686DY-T1-E3 | N Channel Mosfet, 30V, 18.2A, Soic, Full Reel; Channel Type Vishay | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel | N-Channel; N-Channel | N-Channel | N-Channel; N-Channel | N-Channel | |
| PD | 5200 milliwatts | 3000 milliwatts | 3000 to 5200 milliwatts | |||
| TJ | -55 C (-67 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | |||
| Transistor Technology / Material | MOSFET (Metal Oxide) |
