Vishay Intertechnology, Inc. FET, MOSFET Arrays SI4670DY-T1-GE3

Description
Mosfet Array 2 N-Channel (Dual) 25V 8A 2.8W Surface Mount 8-SOIC
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Description
Mosfet Array 2 N-Channel (Dual) 25V 8A 2.8W Surface Mount 8-SOIC
Request a Quote Datasheet

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FET, MOSFET Arrays - SI4670DY-T1-GE3TR-ND - DigiKey
Thief River Falls, MN, United States
FET, MOSFET Arrays
SI4670DY-T1-GE3TR-ND
FET, MOSFET Arrays SI4670DY-T1-GE3TR-ND
Mosfet Array 2 N-Channel (Dual) 25V 8A 2.8W Surface Mount 8-SOIC

Mosfet Array 2 N-Channel (Dual) 25V 8A 2.8W Surface Mount 8-SOIC

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TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI4670DY-T1-GE3 - 1249139-SI4670DY-T1-GE3 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI4670DY-T1-GE3
1249139-SI4670DY-T1-GE3
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI4670DY-T1-GE3 1249139-SI4670DY-T1-GE3
Manufacturer: Vishay Win Source Part Number: 1249139-SI4670DY-T1- GE3 Series: TrenchFET Packaging: Reel - TR Operating Temperature Range: -55°C ~ 150°C (TJ) Package: 8-SOIC (0.154", 3.90mm Width) Mounting: SMD FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Current - Continuous Drain (Id) @ 25°C: 8A Power - Max: 2.8W Family Name: Si4670DY Categories: Discrete Semiconductor Products Manufacturer Homepage: www.vishay.com Manufacturer Package: 8-SO Drain Source Voltage: 25V Vgs(th) (Maximum) @ Id: 2.2V @ 250μA Gate Charge (Qg) (Maximum) @ Vgs: 18nC @ 10V Input Capacitance (Ciss) (Maximum) @ Vds: 680pF @ 13V Rds On (Maximum) @ Id, Vgs: 23 mOhm @ 7A, 10V Alternative Parts (Cross-Reference): uPA2462T1Q-E1-AX; Introduction Date: December 11, 2007 ECCN: EAR99 Estimated EOL Date: 2024 Popularity: Medium Fake Threat In the Open Market: 42 pct. Supply and Demand Status: Balance

Manufacturer: Vishay
Win Source Part Number: 1249139-SI4670DY-T1-GE3
Series: TrenchFET
Packaging: Reel - TR
Operating Temperature Range: -55°C ~ 150°C (TJ)
Package: 8-SOIC (0.154", 3.90mm Width)
Mounting: SMD
FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Current - Continuous Drain (Id) @ 25°C: 8A
Power - Max: 2.8W
Family Name: Si4670DY
Categories: Discrete Semiconductor Products
Manufacturer Homepage: www.vishay.com
Manufacturer Package: 8-SO
Drain Source Voltage: 25V
Vgs(th) (Maximum) @ Id: 2.2V @ 250μA
Gate Charge (Qg) (Maximum) @ Vgs: 18nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds: 680pF @ 13V
Rds On (Maximum) @ Id, Vgs: 23 mOhm @ 7A, 10V
Alternative Parts (Cross-Reference): uPA2462T1Q-E1-AX;
Introduction Date: December 11, 2007
ECCN: EAR99
Estimated EOL Date: 2024
Popularity: Medium
Fake Threat In the Open Market: 42 pct.
Supply and Demand Status: Balance

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Discrete Semiconductor Products - Transistors - FETs, MOSFETs - SI4670DY-T1-GE3 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
SI4670DY-T1-GE3
Discrete Semiconductor Products - Transistors - FETs, MOSFETs SI4670DY-T1-GE3
MOSFET 2N-CH 25V 8A 8SOIC

MOSFET 2N-CH 25V 8A 8SOIC

Supplier's Site
Sheung Wan, Hong Kong
MOSFET 25V Vds 16V Vgs SO-8

MOSFET 25V Vds 16V Vgs SO-8

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Technical Specifications

  DigiKey Win Source Electronics Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number SI4670DY-T1-GE3TR-ND 1249139-SI4670DY-T1-GE3 SI4670DY-T1-GE3 SI4670DY-T1-GE3
Product Name FET, MOSFET Arrays TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI4670DY-T1-GE3 Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET
Package Type "8-SOIC (0.154"", 3.90mm Width)" SOT3
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