Manufacturer: Vishay
Win Source Part Number: 028517-SI4670DY-T1-E
Packaging: Reel - TR
Mounting: SMD (SMT)
FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 8-SO
Maximum Power Dissipation: 2.8W
Drain-Source Breakdown Voltage: 25V
Continuous Drain Current at 25°C: 8A
Gate-Source Threshold Voltage: 2.2V @ 250μA
Max Gate Charge: 18nC @ 10V
Max Input Capacitance: 680pF @ 13V
Maximum Rds On at Id,Vgs: 23 mOhm @ 7A, 10V
Popularity: Medium
Fake Threat In the Open Market: 63 pct.
Supply and Demand Status: Balance
Mosfet Array 2 N-Channel (Dual) 25V 8A 2.8W Surface Mount 8-SOIC
MOSFET 2N-CH 25V 8A 8SOIC
| Win Source Electronics | DigiKey | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | 028517-SI4670DY-T1-E3 | SI4670DY-T1-E3TR-ND | SI4670DY-T1-E3 | SI4670DY-T1-E3 |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI4670DY-T1-E3 | FET, MOSFET Arrays | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel | |||
| V(BR)DSS | 25 volts | |||
| PD | 2800 milliwatts |
