Vishay Intertechnology, Inc. TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI4668DY-T1-E3 SI4668DY-T1-E3

Manufacturer: Vishay Win Source Part Number: 1095979-SI4668DY-T1- E3 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 2.5W (Ta), 5W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 8-SO Dimension: 8-SOIC (0.154", 3.90mm Width) Drain-Source Breakdown Voltage: 25V Continuous Drain Current at 25°C: 16.2A (Tc) Gate-Source Threshold Voltage: 2.6V @ 250μA Max Gate Charge: 42nC @ 10V Max Input Capacitance: 1654pF @ 15V Maximum Gate-Source Voltage: ±16V Maximum Rds On at Id,Vgs: 10.5 mOhm @ 15A, 10V Popularity: Medium Fake Threat In the Open Market: 50 pct. Supply and Demand Status: Balance