Vishay Precision Group TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI4666DY-T1-GE3 SI4666DY-T1-GE3

Manufacturer: Vishay
Win Source Part Number: 1095978-SI4666DY-T1-GE3
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 2.5W (Ta), 5W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 8-SO
Dimension: 8-SOIC (0.154", 3.90mm Width)
Drain-Source Breakdown Voltage: 25V
Continuous Drain Current at 25°C: 16.5A (Tc)
Gate-Source Threshold Voltage: 1.5V @ 250μA
Max Gate Charge: 34nC @ 10V
Max Input Capacitance: 1145pF @ 10V
Maximum Gate-Source Voltage: ±12V
Maximum Rds On at Id,Vgs: 10 mOhm @ 10A, 10V
Popularity: Medium
Fake Threat In the Open Market: 68 pct.
Supply and Demand Status: Limited

MOSFET N-CH 25V 16.5A 8SO Product overview: SI4666DY-T1-GE3 from Vishay / Siliconix is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 25V, 16.5A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 25V, 16.5A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SI4666DY-T1-GE3 can be used for catalog matching and distributor lookup.

N-Channel 25V 16.5A (Tc) 2.5W (Ta), 5W (Tc) Surface Mount 8-SOIC