Vishay Intertechnology, Inc. TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI4660DY-T1-E3 SI4660DY-T1-E3

Description
Manufacturer: Vishay Win Source Part Number: 1095977-SI4660DY-T1- E3 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 3.1W (Ta), 5.6W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 8-SO Dimension: 8-SOIC (0.154", 3.90mm Width) Drain-Source Breakdown Voltage: 25V Continuous Drain Current at 25°C: 23.1A (Tc) Gate-Source Threshold Voltage: 2.2V @ 250μA Max Gate Charge: 45nC @ 10V Max Input Capacitance: 2410pF @ 15V Maximum Gate-Source Voltage: ±16V Maximum Rds On at Id,Vgs: 5.8 mOhm @ 15A, 10V Popularity: Medium Fake Threat In the Open Market: 45 pct. Supply and Demand Status: Sufficient
Request a Quote Datasheet
Description
Manufacturer: Vishay Win Source Part Number: 1095977-SI4660DY-T1- E3 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 3.1W (Ta), 5.6W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 8-SO Dimension: 8-SOIC (0.154", 3.90mm Width) Drain-Source Breakdown Voltage: 25V Continuous Drain Current at 25°C: 23.1A (Tc) Gate-Source Threshold Voltage: 2.2V @ 250μA Max Gate Charge: 45nC @ 10V Max Input Capacitance: 2410pF @ 15V Maximum Gate-Source Voltage: ±16V Maximum Rds On at Id,Vgs: 5.8 mOhm @ 15A, 10V Popularity: Medium Fake Threat In the Open Market: 45 pct. Supply and Demand Status: Sufficient
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI4660DY-T1-E3 - 1095977-SI4660DY-T1-E3 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI4660DY-T1-E3
1095977-SI4660DY-T1-E3
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI4660DY-T1-E3 1095977-SI4660DY-T1-E3
Manufacturer: Vishay Win Source Part Number: 1095977-SI4660DY-T1- E3 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 3.1W (Ta), 5.6W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 8-SO Dimension: 8-SOIC (0.154", 3.90mm Width) Drain-Source Breakdown Voltage: 25V Continuous Drain Current at 25°C: 23.1A (Tc) Gate-Source Threshold Voltage: 2.2V @ 250μA Max Gate Charge: 45nC @ 10V Max Input Capacitance: 2410pF @ 15V Maximum Gate-Source Voltage: ±16V Maximum Rds On at Id,Vgs: 5.8 mOhm @ 15A, 10V Popularity: Medium Fake Threat In the Open Market: 45 pct. Supply and Demand Status: Sufficient

Manufacturer: Vishay
Win Source Part Number: 1095977-SI4660DY-T1-E3
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 3.1W (Ta), 5.6W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 8-SO
Dimension: 8-SOIC (0.154", 3.90mm Width)
Drain-Source Breakdown Voltage: 25V
Continuous Drain Current at 25°C: 23.1A (Tc)
Gate-Source Threshold Voltage: 2.2V @ 250μA
Max Gate Charge: 45nC @ 10V
Max Input Capacitance: 2410pF @ 15V
Maximum Gate-Source Voltage: ±16V
Maximum Rds On at Id,Vgs: 5.8 mOhm @ 15A, 10V
Popularity: Medium
Fake Threat In the Open Market: 45 pct.
Supply and Demand Status: Sufficient

Buy Now Datasheet

Technical Specifications

  Win Source Electronics
Product Category Metal-Oxide Semiconductor FET (MOSFET)
Product Number 1095977-SI4660DY-T1-E3
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI4660DY-T1-E3
Polarity N-Channel; N-Channel
V(BR)DSS 25 volts
PD 3100 to 5600 milliwatts
Unlock Full Specs
to access all available technical data

Similar Products

Power - MOSFET (Si/SiC) - Silicon Carbide CoolSiC™ MOSFET - Silicon Carbide MOSFET Discretes - AIMDQ75R016M2H - AIMDQ75R016M2H - Infineon Technologies AG
Specs
Polarity N-Channel; N
Transistor Technology / Material Silicon carbide
TJ -55 to 175 C (-67 to 347 F)
View Details
MOSFETs - 1827104 - RS Components, Ltd.
RS Components, Ltd.
Specs
Polarity P-Channel
MOSFET Operating Mode Enhancement
Package Type SOT23; Sot-23
View Details
PMIC - PMIC - Gate Drivers - LM2726M - 1053309-LM2726M - Win Source Electronics
Specs
Polarity N-Channel
TJ 0.0 to 125 C (32 to 257 F)
Package Type SOT3; 8-SOIC
View Details
2 suppliers
N-channel 60 V, 59 mΩ standard level MOSFET in LFPAK56 - BUK7Y59-60E/A004X - Nexperia B.V.
Specs
MOSFET Operating Mode Enhancement
Package Type SOT669
View Details