Vishay Intertechnology, Inc. TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI4642DY-T1-GE3 SI4642DY-T1-GE3

Description
Manufacturer: Vishay Storage Condition: Dry storage cabinet & Humidity protection package Win Source Part Number: 1092867-SI4642DY-T1- GE3 Mounting: SMD (SMT) Drain to Source Voltage (Vdss): 30 V Input Capacitance: 5.54 nF Power Dissipation: 3.5 W Number of Pins: 8 Rise Time: 180 ns Fall Time: 50 ns Categories: Transistors - FETs, MOSFETs - RF Case / Package: SOIC Popularity: Low Fake Threat In the Open Market: 37 pct. Supply and Demand Status: Shortage Maximum Operating Temperature: 150 °C Mount: Surface Mount RoHS: Compliant Radiation Hardening: No Min Operating Temperature: -55 °C Max Power Dissipation: 7.8 W Turn-On Delay Time: 76 ns Continuous Drain Current (ID): 22.7 A Drain to Source Breakdown Voltage: 30 V Turn-Off Delay Time: 53 ns Drain to Source Resistance: 3.75 mΩ Gate to Source Voltage (Vgs): 20 V Rds On Max: 3.75 mΩ
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Description
Manufacturer: Vishay Storage Condition: Dry storage cabinet & Humidity protection package Win Source Part Number: 1092867-SI4642DY-T1- GE3 Mounting: SMD (SMT) Drain to Source Voltage (Vdss): 30 V Input Capacitance: 5.54 nF Power Dissipation: 3.5 W Number of Pins: 8 Rise Time: 180 ns Fall Time: 50 ns Categories: Transistors - FETs, MOSFETs - RF Case / Package: SOIC Popularity: Low Fake Threat In the Open Market: 37 pct. Supply and Demand Status: Shortage Maximum Operating Temperature: 150 °C Mount: Surface Mount RoHS: Compliant Radiation Hardening: No Min Operating Temperature: -55 °C Max Power Dissipation: 7.8 W Turn-On Delay Time: 76 ns Continuous Drain Current (ID): 22.7 A Drain to Source Breakdown Voltage: 30 V Turn-Off Delay Time: 53 ns Drain to Source Resistance: 3.75 mΩ Gate to Source Voltage (Vgs): 20 V Rds On Max: 3.75 mΩ
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TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI4642DY-T1-GE3 - 1092867-SI4642DY-T1-GE3 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI4642DY-T1-GE3
1092867-SI4642DY-T1-GE3
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI4642DY-T1-GE3 1092867-SI4642DY-T1-GE3
Manufacturer: Vishay Storage Condition: Dry storage cabinet & Humidity protection package Win Source Part Number: 1092867-SI4642DY-T1- GE3 Mounting: SMD (SMT) Drain to Source Voltage (Vdss): 30 V Input Capacitance: 5.54 nF Power Dissipation: 3.5 W Number of Pins: 8 Rise Time: 180 ns Fall Time: 50 ns Categories: Transistors - FETs, MOSFETs - RF Case / Package: SOIC Popularity: Low Fake Threat In the Open Market: 37 pct. Supply and Demand Status: Shortage Maximum Operating Temperature: 150 °C Mount: Surface Mount RoHS: Compliant Radiation Hardening: No Min Operating Temperature: -55 °C Max Power Dissipation: 7.8 W Turn-On Delay Time: 76 ns Continuous Drain Current (ID): 22.7 A Drain to Source Breakdown Voltage: 30 V Turn-Off Delay Time: 53 ns Drain to Source Resistance: 3.75 mΩ Gate to Source Voltage (Vgs): 20 V Rds On Max: 3.75 mΩ

Manufacturer: Vishay
Storage Condition: Dry storage cabinet & Humidity protection package
Win Source Part Number: 1092867-SI4642DY-T1-GE3
Mounting: SMD (SMT)
Drain to Source Voltage (Vdss): 30 V
Input Capacitance: 5.54 nF
Power Dissipation: 3.5 W
Number of Pins: 8
Rise Time: 180 ns
Fall Time: 50 ns
Categories: Transistors - FETs, MOSFETs - RF
Case / Package: SOIC
Popularity: Low
Fake Threat In the Open Market: 37 pct.
Supply and Demand Status: Shortage
Maximum Operating Temperature: 150 °C
Mount: Surface Mount
RoHS: Compliant
Radiation Hardening: No
Min Operating Temperature: -55 °C
Max Power Dissipation: 7.8 W
Turn-On Delay Time: 76 ns
Continuous Drain Current (ID): 22.7 A
Drain to Source Breakdown Voltage: 30 V
Turn-Off Delay Time: 53 ns
Drain to Source Resistance: 3.75 mΩ
Gate to Source Voltage (Vgs): 20 V
Rds On Max: 3.75 mΩ

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Technical Specifications

  Win Source Electronics
Product Category Metal-Oxide Semiconductor FET (MOSFET)
Product Number 1092867-SI4642DY-T1-GE3
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI4642DY-T1-GE3
V(BR)DSS 30 volts
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