Vishay Intertechnology, Inc. Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single SI4632DY-T1-GE3

Description
Win Source Part Number: 1277918-SI4632DY-T1- GE3 Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single Package: Tape & Reel (TR) Standard Package: 2,500 Mounting: SMD (SMT) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 25 V Current - Continuous Drain (Id) @ 25°C: 40A (Tc) Rds On (Max) @ Id, Vgs: 2.7mOhm @ 20A, 10V Vgs(th) (Max) @ Id: 2.6V @ 250µA Power Dissipation (Max): 3.5W (Ta), 7.8W (Tc) Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOIC Gate Charge (Qg) (Max) @ Vgs: 161 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 11175 pF @ 15 V Vgs (Max): ±16V Temperature Range - Operating: -55°C ~ 150°C (TJ) ECCN: EAR99 Fake Threat In the Open Market: 70 pct. MSL Level: 1 (Unlimited) HTSUS: 8541.29.0095 Mfr: Vishay Siliconix Base Product Number: SI4632 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
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Description
Win Source Part Number: 1277918-SI4632DY-T1- GE3 Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single Package: Tape & Reel (TR) Standard Package: 2,500 Mounting: SMD (SMT) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 25 V Current - Continuous Drain (Id) @ 25°C: 40A (Tc) Rds On (Max) @ Id, Vgs: 2.7mOhm @ 20A, 10V Vgs(th) (Max) @ Id: 2.6V @ 250µA Power Dissipation (Max): 3.5W (Ta), 7.8W (Tc) Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOIC Gate Charge (Qg) (Max) @ Vgs: 161 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 11175 pF @ 15 V Vgs (Max): ±16V Temperature Range - Operating: -55°C ~ 150°C (TJ) ECCN: EAR99 Fake Threat In the Open Market: 70 pct. MSL Level: 1 (Unlimited) HTSUS: 8541.29.0095 Mfr: Vishay Siliconix Base Product Number: SI4632 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
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Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - 1277918-SI4632DY-T1-GE3 - Win Source Electronics
Laguna Hills, CA, United States
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single
1277918-SI4632DY-T1-GE3
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single 1277918-SI4632DY-T1-GE3
Win Source Part Number: 1277918-SI4632DY-T1- GE3 Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single Package: Tape & Reel (TR) Standard Package: 2,500 Mounting: SMD (SMT) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 25 V Current - Continuous Drain (Id) @ 25°C: 40A (Tc) Rds On (Max) @ Id, Vgs: 2.7mOhm @ 20A, 10V Vgs(th) (Max) @ Id: 2.6V @ 250µA Power Dissipation (Max): 3.5W (Ta), 7.8W (Tc) Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOIC Gate Charge (Qg) (Max) @ Vgs: 161 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 11175 pF @ 15 V Vgs (Max): ±16V Temperature Range - Operating: -55°C ~ 150°C (TJ) ECCN: EAR99 Fake Threat In the Open Market: 70 pct. MSL Level: 1 (Unlimited) HTSUS: 8541.29.0095 Mfr: Vishay Siliconix Base Product Number: SI4632 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V

Win Source Part Number: 1277918-SI4632DY-T1-GE3
Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Package: Tape & Reel (TR)
Standard Package: 2,500
Mounting: SMD (SMT)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 25 V
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 2.7mOhm @ 20A, 10V
Vgs(th) (Max) @ Id: 2.6V @ 250µA
Power Dissipation (Max): 3.5W (Ta), 7.8W (Tc)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOIC
Gate Charge (Qg) (Max) @ Vgs: 161 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11175 pF @ 15 V
Vgs (Max): ±16V
Temperature Range - Operating: -55°C ~ 150°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 70 pct.
MSL Level: 1 (Unlimited)
HTSUS: 8541.29.0095
Mfr: Vishay Siliconix
Base Product Number: SI4632
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V

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Sheung Wan, Hong Kong
MOSFET 25V 36A 7.8W 2.7mohm @ 10V

MOSFET 25V 36A 7.8W 2.7mohm @ 10V

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Discrete Semiconductor Products - Transistors - FETs, MOSFETs - SI4632DY-T1-GE3 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
SI4632DY-T1-GE3
Discrete Semiconductor Products - Transistors - FETs, MOSFETs SI4632DY-T1-GE3
MOSFET N-CH 25V 40A 8SO

MOSFET N-CH 25V 40A 8SO

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Technical Specifications

  Win Source Electronics VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number 1277918-SI4632DY-T1-GE3 SI4632DY-T1-GE3 SI4632DY-T1-GE3
Product Name Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single MOSFET Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel
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