Vishay Intertechnology, Inc. Single FETs, MOSFETs SI4630DY-T1-E3

Description
N-Channel 25V 40A (Tc) 3.5W (Ta), 7.8W (Tc) Surface Mount 8-SOIC
Request a Quote Datasheet
Description
N-Channel 25V 40A (Tc) 3.5W (Ta), 7.8W (Tc) Surface Mount 8-SOIC
Request a Quote Datasheet

Suppliers

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Product
Description
Supplier Links
Single FETs, MOSFETs - SI4630DY-T1-E3DKR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SI4630DY-T1-E3DKR-ND
Single FETs, MOSFETs SI4630DY-T1-E3DKR-ND
N-Channel 25V 40A (Tc) 3.5W (Ta), 7.8W (Tc) Surface Mount 8-SOIC

N-Channel 25V 40A (Tc) 3.5W (Ta), 7.8W (Tc) Surface Mount 8-SOIC

Buy Now Datasheet
Single FETs, MOSFETs - SI4630DY-T1-E3TR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SI4630DY-T1-E3TR-ND
Single FETs, MOSFETs SI4630DY-T1-E3TR-ND
N-Channel 25V 40A (Tc) 3.5W (Ta), 7.8W (Tc) Surface Mount 8-SOIC

N-Channel 25V 40A (Tc) 3.5W (Ta), 7.8W (Tc) Surface Mount 8-SOIC

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Single FETs, MOSFETs - SI4630DY-T1-E3CT-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SI4630DY-T1-E3CT-ND
Single FETs, MOSFETs SI4630DY-T1-E3CT-ND
N-Channel 25V 40A (Tc) 3.5W (Ta), 7.8W (Tc) Surface Mount 8-SOIC

N-Channel 25V 40A (Tc) 3.5W (Ta), 7.8W (Tc) Surface Mount 8-SOIC

Buy Now Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI4630DY-T1-E3 - 136392-SI4630DY-T1-E3 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI4630DY-T1-E3
136392-SI4630DY-T1-E3
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI4630DY-T1-E3 136392-SI4630DY-T1-E3
Manufacturer: Vishay Win Source Part Number: 136392-SI4630DY-T1-E 3 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 3.5W (Ta), 7.8W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 8-SO Dimension: 8-SOIC (0.154", 3.90mm Width) Drain-Source Breakdown Voltage: 25V Continuous Drain Current at 25°C: 40A (Tc) Gate-Source Threshold Voltage: 2.2V @ 250μA Max Gate Charge: 161nC @ 10V Max Input Capacitance: 6670pF @ 15V Maximum Gate-Source Voltage: ±16V Maximum Rds On at Id,Vgs: 2.7 mOhm @ 20A, 10V Popularity: Medium Fake Threat In the Open Market: 28 pct. Supply and Demand Status: Limited

Manufacturer: Vishay
Win Source Part Number: 136392-SI4630DY-T1-E3
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 3.5W (Ta), 7.8W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 8-SO
Dimension: 8-SOIC (0.154", 3.90mm Width)
Drain-Source Breakdown Voltage: 25V
Continuous Drain Current at 25°C: 40A (Tc)
Gate-Source Threshold Voltage: 2.2V @ 250μA
Max Gate Charge: 161nC @ 10V
Max Input Capacitance: 6670pF @ 15V
Maximum Gate-Source Voltage: ±16V
Maximum Rds On at Id,Vgs: 2.7 mOhm @ 20A, 10V
Popularity: Medium
Fake Threat In the Open Market: 28 pct.
Supply and Demand Status: Limited

Buy Now Datasheet
Singapore
25V 27A SOIC MOSFET Transistor
278-SI4630DY-T1-E3
25V 27A SOIC MOSFET Transistor 278-SI4630DY-T1-E3
N-CH MOSFET 25V 27A 2.7mR SOIC N Product overview: SI4630DY-T1-E3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 25V, 27A, SOIC. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 25V, 27A, SOIC, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SI4630DY-T1-E3 can be used for catalog matching and distributor lookup.

N-CH MOSFET 25V 27A 2.7mR SOIC N Product overview: SI4630DY-T1-E3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 25V, 27A, SOIC. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 25V, 27A, SOIC, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SI4630DY-T1-E3 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - SI4630DY-T1-E3 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
SI4630DY-T1-E3
Discrete Semiconductor Products - Transistors - FETs, MOSFETs SI4630DY-T1-E3
MOSFET N-CH 25V 40A 8SO

MOSFET N-CH 25V 40A 8SO

Supplier's Site
Sheung Wan, Hong Kong
MOSFET 25V Vds 16V Vgs SO-8

MOSFET 25V Vds 16V Vgs SO-8

Buy Now Datasheet
Channel Type Vishay - 85W2149 - Newark, An Avnet Company
Chicago, IL, United States
Channel Type Vishay
85W2149
Channel Type Vishay 85W2149
Channel Type:N Channel; Drain Source Voltage Vds:25V; Continuous Drain Current Id:32A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:1V; Power Dissipation:7.8W; No. of Pins:8Pins RoHS Compliant: Yes

Channel Type:N Channel; Drain Source Voltage Vds:25V; Continuous Drain Current Id:32A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:1V; Power Dissipation:7.8W; No. of Pins:8Pins RoHS Compliant: Yes

Supplier's Site
Mosfet, N Channel, 25V, 40A, Soic-8, Full Reel; Channel Type Vishay - 75M5483 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet, N Channel, 25V, 40A, Soic-8, Full Reel; Channel Type Vishay
75M5483
Mosfet, N Channel, 25V, 40A, Soic-8, Full Reel; Channel Type Vishay 75M5483
MOSFET, N CHANNEL, 25V, 40A, SOIC-8, FULL REEL; Channel Type:N Channel; Drain Source Voltage Vds:25V; Continuous Drain Current Id:40A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:1V RoHS Compliant: Yes

MOSFET, N CHANNEL, 25V, 40A, SOIC-8, FULL REEL; Channel Type:N Channel; Drain Source Voltage Vds:25V; Continuous Drain Current Id:40A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:1V RoHS Compliant: Yes

Supplier's Site Datasheet

Technical Specifications

  DigiKey Win Source Electronics ERSAELECTRONICS PTE. LTD. Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED Newark, An Avnet Company Newark, An Avnet Company
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number SI4630DY-T1-E3DKR-ND 136392-SI4630DY-T1-E3 278-SI4630DY-T1-E3 SI4630DY-T1-E3 SI4630DY-T1-E3 85W2149 75M5483
Product Name Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI4630DY-T1-E3 25V 27A SOIC MOSFET Transistor Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET Channel Type Vishay Mosfet, N Channel, 25V, 40A, Soic-8, Full Reel; Channel Type Vishay
Polarity N-Channel N-Channel; N-Channel N-Channel N-Channel
Package Type "8-SOIC (0.154"", 3.90mm Width)" SOT3; 8-SO 8-SOIC (0.154, 3.90mm Width) TO-3 TO-3
V(BR)DSS 25 volts
PD 3500 to 7800 milliwatts 7800 milliwatts
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